Parametric results for: FDB3502 under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Output Current-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

54.0 mJ 2

9 hits Apply

DRAIN 2 ISOLATED 4

9 hits Apply

Configuration (2)

BRIDGE, 4 ELEMENTS 4 SINGLE WITH BUILT-IN DIODE 2

9 hits Apply

DS Breakdown Voltage-Min (1)

75 V 2

9 hits Apply

Drain Current-Max (ID) (1)

6 A 2

9 hits Apply

Drain-source On Resistance-Max (1)

47 mΩ 2

9 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

9 hits Apply

TO-263AB 2

9 hits Apply

R-PSSO-G2 2 S-PUFM-D4 2 S-PUFM-W4 2

9 hits Apply

e3 2

9 hits Apply

Manufacturer (3)

Diotec Electronics Corp 7 Fairchild Semiconductor Corporation 1 onsemi 1

9 hits Apply

1 2

9 hits Apply

Number of Elements (2)

1 2 4 4

Min - Max

9 hits Apply

Number of Terminals (2)

2 2 4 4

9 hits Apply

ENHANCEMENT MODE 2

9 hits Apply

125.0 °C 4 150.0 °C 2

Min (°C) - Max (°C)

9 hits Apply

-55.0 °C 2

9 hits Apply

35 A 4

9 hits Apply

PLASTIC/EPOXY 6

9 hits Apply

RECTANGULAR 2 SQUARE 4

9 hits Apply

FLANGE MOUNT 4 SMALL OUTLINE 2

9 hits Apply

Contact Manufacturer 7 Obsolete 1 Transferred 1

9 hits Apply

Yes 2

9 hits Apply

245 1 260 1

9 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

9 hits Apply

41 W 2

9 hits Apply

Surface Mount (2)

NO 4 YES 2

9 hits Apply