Parametric results for: FDM3622 under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

190.0 mJ 3

4 hits Apply

DRAIN 3

4 hits Apply

Configuration (2)

SINGLE 1 SINGLE WITH BUILT-IN DIODE 3

4 hits Apply

DS Breakdown Voltage-Min (1)

100 V 3

4 hits Apply

Drain Current-Max (ID) (1)

4.4 A 4

4 hits Apply

Drain-source On Resistance-Max (1)

60 mΩ 3

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

4 hits Apply

S-PDSO-F5 3

4 hits Apply

e3 2 e4 1

4 hits Apply

Manufacturer (2)

Fairchild Semiconductor Corporation 3 onsemi 1

4 hits Apply

1 2

4 hits Apply

Number of Elements (1)

1 4

4 hits Apply

Number of Terminals (1)

5 3

4 hits Apply

ENHANCEMENT MODE 4

4 hits Apply

150.0 °C 3

4 hits Apply

-55.0 °C 1

4 hits Apply

PLASTIC/EPOXY 3

4 hits Apply

SQUARE 3

4 hits Apply

SMALL OUTLINE 3

4 hits Apply

Active 1 Obsolete 2 Transferred 1

4 hits Apply

Yes 2

4 hits Apply

260 2

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

4 hits Apply

2.1 mW 1 2.4 W 2

Min (W) - Max (W)

4 hits Apply

Surface Mount (1)

YES 4

4 hits Apply