Parametric results for: FS5AS under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

DRAIN 52

52 hits Apply

Configuration (2)

SINGLE 9 SINGLE WITH BUILT-IN DIODE 43

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DS Breakdown Voltage-Min (4)

60 V 18 100 V 16 150 V 16 500 V 2

Min (V) - Max (V)

52 hits Apply

Drain Current-Max (ID) (1)

5 A 52

52 hits Apply

Drain-source On Resistance-Max (13)

140 mΩ 1 150 mΩ 1 160 mΩ 6 190 mΩ 6 200 mΩ 4 350 mΩ 2 370 mΩ 8 380 mΩ 6 400 mΩ 1 440 mΩ 2 460 mΩ 5 470 mΩ 8 1.5 Ω 2

Min (Ω) - Max (Ω)

52 hits Apply

METAL-OXIDE SEMICONDUCTOR 52

52 hits Apply

15 pF 2 18 pF 2 20 pF 2 30 pF 2 35 pF 4 40 pF 4

Min (pF) - Max (pF)

52 hits Apply

R-PSSO-G2 52

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e0 9

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Manufacturer (3)

Mitsubishi Electric 27 Powerex Power Semiconductors 9 Renesas Electronics Corporation 16

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Number of Elements (1)

1 52

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Number of Terminals (1)

2 52

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ENHANCEMENT MODE 52

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150.0 °C 34

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-55.0 °C 12 -50.0 °C 2

Min (°C) - Max (°C)

52 hits Apply

PLASTIC/EPOXY 52

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RECTANGULAR 52

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SMALL OUTLINE 52

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Active 1 Not Recommended 5 Obsolete 39 Transferred 7

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Polarity/Channel Type (1)

N-CHANNEL 52

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20 W 6 30 W 3

Min (W) - Max (W)

52 hits Apply

15 W 2 20 W 20 30 W 10 65 W 2

Min (W) - Max (W)

52 hits Apply

Surface Mount (1)

YES 52

52 hits Apply