Parametric results for: FSGS0 under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

ISOLATED 12

12 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 12

12 hits Apply

DS Breakdown Voltage-Min (2)

30 V 6 60 V 6

Min (V) - Max (V)

12 hits Apply

Drain Current-Max (ID) (1)

16 A 12

12 hits Apply

Drain-source On Resistance-Max (2)

20 mΩ 6 36 mΩ 6

Min (Ω) - Max (Ω)

12 hits Apply

METAL-OXIDE SEMICONDUCTOR 12

12 hits Apply

TO-257AA 12

12 hits Apply

S-MSFM-P3 12

12 hits Apply

e0 12

12 hits Apply

Manufacturer (2)

Fairchild Semiconductor Corporation 6 International Rectifier 6

12 hits Apply

Number of Elements (1)

1 12

12 hits Apply

Number of Terminals (1)

3 12

12 hits Apply

ENHANCEMENT MODE 12

12 hits Apply

125.0 °C 3 150.0 °C 9

Min (°C) - Max (°C)

12 hits Apply

METAL 12

12 hits Apply

SQUARE 12

12 hits Apply

FLANGE MOUNT 12

12 hits Apply

Obsolete 6 Transferred 6

12 hits Apply

No 6

12 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 12

12 hits Apply

56 W 3 57 W 3

Min (W) - Max (W)

12 hits Apply

Surface Mount (1)

NO 12

12 hits Apply