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TX-GC1706-15
Lockheed Martin Microwave
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Check for Price | Obsolete | 2.7 pF | 20 nA | SILICON | 60 V | VARIABLE CAPACITANCE DIODE | SINGLE | NO | 1 | HIGH RELIABILITY | 10 % | 5.9 | S BAND | 1600 | 55 V | ABRUPT | Not Qualified | O-LALF-W2 | 150 °C | -55 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WIRE | AXIAL | LOCKHEED MARTIN MICROWAVE | O-LALF-W2 | unknown | EAR99 | 8541.10.00.80 | |||
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GC1706B-5%
Msi Electronics Inc
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Check for Price | Obsolete | 2.7 pF | 20 nA | SILICON | 60 V | VARIABLE CAPACITANCE DIODE | SINGLE | YES | 1 | 5 % | 5.9 | 1100 | 55 V | ABRUPT | Not Qualified | O-CEMW-N2 | CATHODE | 2 | CERAMIC, METAL-SEALED COFIRED | ROUND | MICROWAVE | NO LEAD | END | MSI ELECTRONICS INC | O-CEMW-N2 | unknown | EAR99 | 8541.10.00.80 | |||||||
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GC1706D-+2
Spectrum Control
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Check for Price | Contact Manufacturer | 2.7 pF | VARIABLE CAPACITANCE DIODE | SINGLE | YES | 60 V | 1 | 5.9 | 1100 | ABRUPT | 175 °C | CATHODE | API TECHNOLOGIES CORP | compliant | EAR99 | ||||||||||||||||||||
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GC1706-00
Frequency Sources
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Check for Price | Transferred | 2.7 pF | VARIABLE CAPACITANCE DIODE | YES | 60 V | 1600 | FREQUENCY SOURCES | unknown | EAR99 | ||||||||||||||||||||||||||
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GC1706F-5%
Spectrum Control
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Check for Price | Active | 2.7 pF | 20 nA | SILICON | 60 V | VARIABLE CAPACITANCE DIODE | SINGLE | YES | 1 | 5 % | 5.9 | 1100 | 55 V | ABRUPT | Not Qualified | X-CXMW-F2 | 2 | CERAMIC, METAL-SEALED COFIRED | UNSPECIFIED | MICROWAVE | FLAT | UNSPECIFIED | API TECHNOLOGIES CORP | X-CXMW-F2 | compliant | EAR99 | 8541.10.00.80 | ||||||||
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GC1706F-+5
Msi Electronics Inc
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Check for Price | Transferred | 2.7 pF | VARIABLE CAPACITANCE DIODE | YES | 60 V | 1100 | MSI ELECTRONICS INC | unknown | EAR99 | ||||||||||||||||||||||||||
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GC1706E-+2
Spectrum Control
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Check for Price | Contact Manufacturer | 2.7 pF | VARIABLE CAPACITANCE DIODE | SINGLE | YES | 60 V | 1 | 5.9 | 1100 | ABRUPT | 175 °C | CATHODE | API TECHNOLOGIES CORP | compliant | EAR99 | ||||||||||||||||||||
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GC1706D-5%
Spectrum Control
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Check for Price | Active | 2.7 pF | 20 nA | SILICON | 60 V | VARIABLE CAPACITANCE DIODE | SINGLE | YES | 1 | 5 % | 5.9 | 1100 | 55 V | ABRUPT | Not Qualified | O-CEMW-N2 | 2 | CERAMIC, METAL-SEALED COFIRED | ROUND | MICROWAVE | NO LEAD | END | API TECHNOLOGIES CORP | O-CEMW-N2 | compliant | EAR99 | 8541.10.00.80 | ||||||||
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GC1706B-5%
Spectrum Control
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Check for Price | Active | 2.7 pF | 20 nA | SILICON | 60 V | VARIABLE CAPACITANCE DIODE | SINGLE | YES | 1 | 5 % | 5.9 | 1100 | 55 V | ABRUPT | Not Qualified | O-CEMW-N2 | 2 | CERAMIC, METAL-SEALED COFIRED | ROUND | MICROWAVE | NO LEAD | END | API TECHNOLOGIES CORP | O-CEMW-N2 | compliant | EAR99 | 8541.10.00.80 | ||||||||
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TX-GC1706-89
Lockheed Martin Microwave
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Check for Price | Obsolete | 2.7 pF | 20 nA | SILICON | 60 V | VARIABLE CAPACITANCE DIODE | SINGLE | YES | 1 | HIGH RELIABILITY | 10 % | 5.9 | S BAND | 1600 | 55 V | ABRUPT | Not Qualified | O-CEMW-N2 | 150 °C | -55 °C | 2 | CERAMIC, METAL-SEALED COFIRED | ROUND | MICROWAVE | NO LEAD | END | LOCKHEED MARTIN MICROWAVE | O-CEMW-N2 | unknown | EAR99 | 8541.10.00.80 |