Parametric results for: GD25Q80ETEGR under Flash Memories

All Filters Additional Feature Clock Frequency-Max (fCLK) Data Retention Time-Min Endurance JESD-30 Code Length Manufacturer Memory Density Memory IC Type Memory Width Number of Functions Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Package Body Material Package Code Package Equivalence Code Package Shape Package Style Supply Voltage-Nom (Vsup)

2.7V TO 3V @ 104MHZ 1

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Clock Frequency-Max (fCLK) (1)

133 MHz 1

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20 1

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100000.0 Write/Erase Cycles 1

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R-PDSO-G8 1

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4.9 mm 1

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Manufacturer (1)

GigaDevice Semiconductor (Beijing) Inc 1

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Memory Density (1)

8.3886 Mbit 1

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FLASH 1

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Memory Width (1)

8 1

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1.0 1

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8 1

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1.0486 M 1

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1000000.0 1

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SYNCHRONOUS 1

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125.0 °C 1

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-40.0 °C 1

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Organization (1)

1MX8 1

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PLASTIC/EPOXY 1

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SOP 1

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SOP8,.25 1

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RECTANGULAR 1

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SMALL OUTLINE 1

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Supply Voltage-Nom (Vsup) (1)

3.3 V 1

1 hit Apply