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GE28F640L30B90
Intel Corporation
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Check for Price | No | Transferred | 67.1089 Mbit | 16 | 16K,64K | 4MX16 | 1.8 V | 90 ns | FLASH | SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE | BOTTOM | YES | YES | NO | 1 | 4,63 | 4000000 | 4.1943 M | ASYNCHRONOUS | 4 words | PARALLEL | 1.8 V | 5 µA | 51 µA | 2 V | 1.7 V | CMOS | OTHER | NO | NOR TYPE | R-PBGA-B56 | Not Qualified | 85 °C | -25 °C | 240 | 30 | 56 | PLASTIC/EPOXY | VFBGA | BGA56,7X8,30 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | YES | BALL | 750 µm | BOTTOM | 1 mm | 9 mm | 7.7 mm | INTEL CORP | BGA | 0.75 MM PITCH, VFBGA-56 | 56 | compliant | EAR99 | 8542.32.00.51 | |||||
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GE28F160C3TD70
Intel Corporation
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Check for Price | No | Transferred | 16.7772 Mbit | 16 | 4K,32K | 1MX16 | 3 V | 70 ns | FLASH | USER-SELECTABLE 3V OR 12V VPP; TOP BOOT BLOCK | TOP | YES | YES | NO | 1 | 8,31 | 1000000 | 1.0486 M | ASYNCHRONOUS | PARALLEL | 3 V | 5 µA | 55 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | NO | NOR TYPE | R-PBGA-B46 | Not Qualified | e0 | 85 °C | -40 °C | 46 | PLASTIC/EPOXY | VFBGA | BGA46,6X8,30 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | YES | TIN LEAD | BALL | 750 µm | BOTTOM | 1 mm | 7.286 mm | 6.964 mm | INTEL CORP | BGA | VFBGA-46 | 46 | compliant | EAR99 | 8542.32.00.51 | ||||||
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GE28F320C3TD70
Numonyx Memory Solutions
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Check for Price | No | Obsolete | 33.5544 Mbit | 16 | 4K,32K | 2MX16 | 3 V | 70 ns | FLASH | USER-SELECTABLE 3V OR 12V VPP; TOP BOOT BLOCK | TOP | YES | YES | NO | 1 | 8,63 | 2000000 | 2.0972 M | ASYNCHRONOUS | PARALLEL | 3 V | 20 µA | 18 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | NO | NOR TYPE | R-PBGA-B48 | Not Qualified | 1 | 85 °C | -40 °C | 48 | PLASTIC/EPOXY | VFBGA | BGA47,6X8,30 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | YES | BALL | 750 µm | BOTTOM | 1 mm | 10.85 mm | 7.286 mm | NUMONYX | BGA | LEAD FREE, VFBGA-48 | 48 | unknown | EAR99 | 8542.32.00.51 | |||||||
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GE28F128W18BC85
Intel Corporation
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Check for Price | Obsolete | 134.2177 Mbit | 16 | 4K,32K | 8MX16 | 85 ns | FLASH | BOTTOM | YES | YES | NO | 8, 255 | 8000000 | 8.3886 M | 4 words | PARALLEL | 5 µA | 40 µA | CMOS | INDUSTRIAL | NO | NOR TYPE | R-PBGA-B56 | Not Qualified | 85 °C | -40 °C | 56 | PLASTIC/EPOXY | FBGA | BGA56,7X8,30 | RECTANGULAR | GRID ARRAY, FINE PITCH | YES | BALL | 750 µm | BOTTOM | INTEL CORP | FBGA, BGA56,7X8,30 | unknown | EAR99 | 8542.32.00.51 | ||||||||||||||||||||
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GE28F320W18TC80
Intel Corporation
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Check for Price | No | Transferred | 33.5544 Mbit | 16 | 2MX16 | 1.8 V | 80 ns | FLASH | SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE | TOP | 1 | 2000000 | 2.0972 M | ASYNCHRONOUS | PARALLEL | 1.8 V | 1.95 V | 1.7 V | CMOS | INDUSTRIAL | NOR TYPE | R-PBGA-B56 | Not Qualified | e0 | 85 °C | -40 °C | 56 | PLASTIC/EPOXY | VFBGA | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | YES | TIN LEAD | BALL | 750 µm | BOTTOM | 1 mm | 9 mm | 7.7 mm | INTEL CORP | BGA | 0.75 MM PITCH, VFBGA-56 | 56 | compliant | EAR99 | 8542.32.00.51 | |||||||||||||||
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GE28F640L30T90
Intel Corporation
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Check for Price | Transferred | 67.1089 Mbit | 16 | 16K,64K | 4MX16 | 1.8 V | 90 ns | FLASH | SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE | TOP | YES | YES | NO | 1 | 4,63 | 4000000 | 4.1943 M | ASYNCHRONOUS | 4 words | PARALLEL | 1.8 V | 5 µA | 51 µA | 2 V | 1.7 V | CMOS | OTHER | NO | NOR TYPE | R-PBGA-B56 | Not Qualified | 85 °C | -25 °C | 56 | PLASTIC/EPOXY | VFBGA | BGA56,7X8,30 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | YES | BALL | 750 µm | BOTTOM | 1 mm | 9 mm | 7.7 mm | INTEL CORP | BGA | 0.75 MM PITCH, VFBGA-56 | 56 | unknown | EAR99 | 8542.32.00.51 | ||||||||
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GE28F640L18B105
Intel Corporation
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Check for Price | No | Transferred | 67.1089 Mbit | 16 | 16K,64K | 4MX16 | 1.8 V | 105 ns | FLASH | SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE | BOTTOM | YES | YES | NO | 1 | 4,63 | 4000000 | 4.1943 M | ASYNCHRONOUS | 4 words | PARALLEL | 1.8 V | 5 µA | 50 µA | 2 V | 1.7 V | CMOS | OTHER | NO | NOR TYPE | R-PBGA-B56 | Not Qualified | 85 °C | -25 °C | 240 | 30 | 56 | PLASTIC/EPOXY | VFBGA | BGA56,7X8,30 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | YES | BALL | 750 µm | BOTTOM | 1 mm | 9 mm | 7.7 mm | INTEL CORP | BGA | 0.75 MM PITCH, VFBGA-56 | 56 | compliant | EAR99 | 8542.32.00.51 | |||||
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GE28F320W18TD60
Intel Corporation
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Check for Price | No | Transferred | 33.5544 Mbit | 16 | 4K,32K | 2MX16 | 1.8 V | 60 ns | FLASH | SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE | TOP | YES | YES | NO | 1 | 8,63 | 2000000 | 2.0972 M | ASYNCHRONOUS | 4 words | PARALLEL | 1.8 V | 5 µA | 40 µA | 1.95 V | 1.7 V | CMOS | INDUSTRIAL | NO | NOR TYPE | R-PBGA-B56 | Not Qualified | e0 | 85 °C | -40 °C | 56 | PLASTIC/EPOXY | VFBGA | BGA56,7X8,30 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | YES | TIN LEAD | BALL | 750 µm | BOTTOM | 1 mm | 9 mm | 7.7 mm | INTEL CORP | BGA | VFBGA, BGA56,7X8,30 | 56 | compliant | EAR99 | 8542.32.00.51 | |||||
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GE28F320C3BC70
Micron Technology Inc
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Check for Price | No | Obsolete | 33.5544 Mbit | 16 | 4K,32K | 2MX16 | 3 V | 70 ns | FLASH | BOTTOM | YES | YES | NO | 8,63 | 2000000 | 2.0972 M | PARALLEL | 3 V | 5 µA | 55 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | NO | NOR TYPE | R-PBGA-B47 | Not Qualified | 85 °C | -40 °C | 47 | PLASTIC/EPOXY | FBGA | BGA47,6X8,30 | RECTANGULAR | GRID ARRAY, FINE PITCH | YES | BALL | 750 µm | BOTTOM | MICRON TECHNOLOGY INC | FBGA, BGA47,6X8,30 | unknown | EAR99 | 8542.32.00.51 | ||||||||||||||||
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GE28F128W30TD85
Numonyx Memory Solutions
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Check for Price | Obsolete | 134.2177 Mbit | 16 | 8MX16 | 1.8 V | 85 ns | FLASH | SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE | TOP | 1 | 8000000 | 8.3886 M | SYNCHRONOUS | PARALLEL | 1.8 V | 1.9 V | 1.7 V | CMOS | INDUSTRIAL | NOR TYPE | R-PBGA-B56 | Not Qualified | e1 | 85 °C | -40 °C | 260 | 40 | 56 | PLASTIC/EPOXY | VFBGA | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 750 µm | BOTTOM | 1 mm | 11 mm | 9 mm | NUMONYX | BGA | 0.75 MM PITCH, VFBGA-56 | 56 | unknown | EAR99 | 8542.32.00.51 |