Parametric results for: GM71C16401 under DRAMs

All Filters Access Mode Access Time-Max Additional Feature I/O Type JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Number of Functions Number of Ports Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Refresh Cycles Supply Voltage-Nom (Vsup) Access Mode (2)

FAST PAGE 35 FAST PAGE WITH EDO 17

82 hits Apply

Access Time-Max (4)

50 ns 10 60 ns 28 70 ns 28 80 ns 16

Min (ns) - Max (ns)

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RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH 34 RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; BATTERY BACKUP OPERATION 12 RAS ONLY/CAS BEFORE RAS/HIDDEN/BATTERY BACKUP REFRESH 6

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COMMON 70

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R-PDSO-G24 49 R-PDSO-J24 33

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e0 70 e6 1

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16.9 mm 6 17.14 mm 4

Min (mm) - Max (mm)

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Manufacturer (3)

Goldstar Electron Co Ltd 9 LG Semicon Co Ltd 51 SK Hynix Inc 22

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Memory Density (1)

16.7772 Mbit 82

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EDO DRAM 17 FAST PAGE DRAM 65

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Memory Width (1)

4 82

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1.0 52

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1 52

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24 82

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4.1943 M 82

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4000000.0 82

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ASYNCHRONOUS 52

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70.0 °C 82

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0.0 °C 82

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Organization (1)

4MX4 82

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3-STATE 79

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PLASTIC/EPOXY 82

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SOJ 30 TSOP 39 TSOP2 4

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SOJ24/26,.34 28 TSOP24/26,.36 42

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RECTANGULAR 82

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SMALL OUTLINE 57 SMALL OUTLINE, THIN PROFILE 25

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Refresh Cycles (1)

4096 79

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Supply Voltage-Nom (Vsup) (1)

5 V 82

82 hits Apply