Parametric results for: GP30G under Rectifier Diodes
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EGP30G
onsemi
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$0.3622 | Yes | Active | 3 A | 1.3 V | 50 ns | 6.25 W | SILICON | RECTIFIER DIODE | SINGLE | NO | 400 V | 1 | EFFICIENCY | 125 A | 1 | Not Qualified | O-PALF-W2 | e3 | DO-201AD | 150 °C | -65 °C | NOT SPECIFIED | NOT SPECIFIED | ISOLATED | 2 | PLASTIC/EPOXY | ROUND | LONG FORM | Matte Tin (Sn) - annealed | WIRE | AXIAL | ONSEMI | DO-201AD, 2 PIN | 017AF | not_compliant | EAR99 | 8541.10.00.80 | onsemi | |||||||
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GP30G-E3/54
Vishay Semiconductors
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$0.3805 | Yes | Yes | Not Recommended | 3 A | 1.1 V | 5 µs | SILICON | RECTIFIER DIODE | SINGLE | NO | 400 V | 1 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE | HIGH VOLTAGE | 125 A | 1 | Not Qualified | O-PALF-W2 | e3 | DO-201AD | 175 °C | -65 °C | ISOLATED | 2 | PLASTIC/EPOXY | ROUND | LONG FORM | MATTE TIN | WIRE | AXIAL | VISHAY SEMICONDUCTORS | O-PALF-W2 | unknown | EAR99 | 8541.10.00.80 | Vishay | DO-201AD | 2 | |||||||
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RGP30G-E3/54
Vishay Semiconductors
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$0.4826 | Yes | Yes | Not Recommended | 3 A | 1.3 V | 150 ns | SILICON | RECTIFIER DIODE | SINGLE | NO | 400 V | 1 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | EFFICIENCY | 125 A | 1 | Not Qualified | O-PALF-W2 | e3 | DO-201AD | 175 °C | -65 °C | ISOLATED | 2 | PLASTIC/EPOXY | ROUND | LONG FORM | MATTE TIN | WIRE | AXIAL | VISHAY SEMICONDUCTORS | O-PALF-W2 | unknown | EAR99 | 8541.10.00.80 | Vishay | DO-201AD | 2 | |||||||
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GP30G-E3/54
Vishay Intertechnologies
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$0.5258 | Yes | Not Recommended | 3 A | 1.1 V | 5 µs | SILICON | RECTIFIER DIODE | SINGLE | NO | 400 V | 1 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE | HIGH VOLTAGE | 125 A | 1 | Not Qualified | O-PALF-W2 | e3 | DO-201AD | 175 °C | -65 °C | ISOLATED | 2 | PLASTIC/EPOXY | ROUND | LONG FORM | MATTE TIN | WIRE | AXIAL | VISHAY INTERTECHNOLOGY INC | compliant | Vishay | |||||||||||||
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RGP30G-TP
Micro Commercial Components
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Check for Price | Yes | Yes | Obsolete | 3 A | 150 ns | SILICON | RECTIFIER DIODE | SINGLE | NO | 400 V | 1 | METALLURGICALLY BONDED | EFFICIENCY | 125 A | 1 | Not Qualified | O-PALF-W2 | e3 | DO-201AD | ISOLATED | 2 | PLASTIC/EPOXY | ROUND | LONG FORM | MATTE TIN | WIRE | AXIAL | MICRO COMMERCIAL COMPONENTS | DO-201AD, 2 PIN | not_compliant | EAR99 | 8541.10.00.80 | DO-201AD | 2 | |||||||||||
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RGP30G
Galaxy Microelectronics
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Check for Price | Active | 3 A | 1.3 V | 150 ns | 5 µA | SILICON | RECTIFIER DIODE | SINGLE | NO | 400 V | 1 | FAST RECOVERY | 125 A | 1 | O-PALF-W2 | DO-27 | 125 °C | -55 °C | ISOLATED | 2 | PLASTIC/EPOXY | ROUND | LONG FORM | WIRE | AXIAL | CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD | unknown | EAR99 | 8541.10.00.80 | DO-27 | |||||||||||||||
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EGP30G-B
Micro Commercial Components
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Check for Price | No | Obsolete | e0 | 240 | 30 | TIN LEAD | MICRO COMMERCIAL COMPONENTS | unknown | EAR99 | ||||||||||||||||||||||||||||||||||||
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EGP30GHE3/54
Vishay Semiconductors
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Check for Price | Yes | Yes | Obsolete | 3 A | 1.25 V | 50 ns | SILICON | RECTIFIER DIODE | SINGLE | NO | 400 V | 1 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | EFFICIENCY | 125 A | 1 | Not Qualified | O-PALF-W2 | e3 | 150 °C | -65 °C | ISOLATED | 2 | PLASTIC/EPOXY | ROUND | LONG FORM | MATTE TIN | WIRE | AXIAL | VISHAY SEMICONDUCTORS | O-PALF-W2 | unknown | EAR99 | 8541.10.00.80 | 2 | ||||||||||
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GP30G
Promax-Johnton Electronic Corporation
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Check for Price | Obsolete | 3 A | 1.1 V | 5 µA | SILICON | RECTIFIER DIODE | SINGLE | NO | 1 | GENERAL PURPOSE | 125 A | 1 | Not Qualified | O-XALF-W2 | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | WIRE | AXIAL | PROMAX-JOHNTON CORP | DO-201AD, 2 PIN | unknown | EAR99 | 8541.10.00.80 | DO-201AD | 2 | |||||||||||||||||
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GP30G
New Jersey Semiconductor Products Inc
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Check for Price | Active | 3 A | 1.1 V | 5 µA | SILICON | RECTIFIER DIODE | SINGLE | 400 V | 1 | GENERAL PURPOSE | 125 A | 1 | 175 °C | -65 °C | NEW JERSEY SEMICONDUCTOR PRODUCTS INC | unknown | EAR99 |