Parametric results for: H55S1262EFP-A3E under DRAMs

All Filters Access Mode Access Time-Max Additional Feature Clock Frequency-Max (fCLK) I/O Type Interleaved Burst Length JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Number of Functions Number of Ports Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Refresh Cycles Supply Voltage-Nom (Vsup) Access Mode (1)

FOUR BANK PAGE BURST 1

1 hit Apply

Access Time-Max (1)

7 ns 1

1 hit Apply

AUTO/SELF REFRESH 1

1 hit Apply

Clock Frequency-Max (fCLK) (1)

105 MHz 1

1 hit Apply

COMMON 1

1 hit Apply

1,2,4,8 1

1 hit Apply

S-PBGA-B54 1

1 hit Apply

e1 1

1 hit Apply

8 mm 1

1 hit Apply

Manufacturer (1)

SK Hynix Inc 1

1 hit Apply

Memory Density (1)

134.2177 Mbit 1

1 hit Apply

STATIC COLUMN DRAM 1

1 hit Apply

Memory Width (1)

16 1

1 hit Apply

1.0 1

1 hit Apply

1 1

1 hit Apply

54 1

1 hit Apply

8.3886 M 1

1 hit Apply

8000000.0 1

1 hit Apply

SYNCHRONOUS 1

1 hit Apply

85.0 °C 1

1 hit Apply

-25.0 °C 1

1 hit Apply

Organization (1)

8MX16 1

1 hit Apply

3-STATE 1

1 hit Apply

PLASTIC/EPOXY 1

1 hit Apply

VFBGA 1

1 hit Apply

BGA54,9X9,32 1

1 hit Apply

SQUARE 1

1 hit Apply

GRID ARRAY, VERY THIN PROFILE, FINE PITCH 1

1 hit Apply

Refresh Cycles (1)

4096 1

1 hit Apply

Supply Voltage-Nom (Vsup) (1)

1.8 V 1

1 hit Apply