Parametric results for: HM1-65642B/883 under SRAMs
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HM1-65642B/883
Intersil Corporation
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Check for Price | No | No | Transferred | 65.536 kbit | 8 | 8KX8 | 5 V | 150 ns | STANDARD SRAM | COMMON | 1 | 1 | 8000 | 8.192 k | ASYNCHRONOUS | 3-STATE | YES | PARALLEL | 75 µA | 2 V | 48 µA | 5.5 V | 4.5 V | CMOS | MILITARY | R-GDIP-T28 | Not Qualified | e0 | 125 °C | -55 °C | 38535Q/M;38534H;883B | 28 | CERAMIC, GLASS-SEALED | DIP | DIP28,.6 | RECTANGULAR | IN-LINE | NO | Tin/Lead (Sn/Pb) | THROUGH-HOLE | 2.54 mm | DUAL | INTERSIL CORP | DIP | DIP-28 | 28 | not_compliant | 3A001.A.2.C | 8542.32.00.41 | ||||||
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HM1-65642B/883
Renesas Electronics Corporation
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Check for Price | No | Active | 65.536 kbit | 8 | 8KX8 | 5 V | 150 ns | STANDARD SRAM | 1 | 8000 | 8.192 k | ASYNCHRONOUS | PARALLEL | 5.5 V | 4.5 V | CMOS | MILITARY | R-GDIP-T28 | Not Qualified | e0 | 125 °C | -55 °C | MIL-STD-883 | 28 | CERAMIC, GLASS-SEALED | DIP | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | 5.92 mm | 15.24 mm | RENESAS ELECTRONICS CORP | CERDIP | DIP-28 | 28 | unknown | 3A001.A.2.C | 8542.32.00.41 | F28.6 | Renesas Electronics | |||||||||||
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HM1-65642B/883
Harris Semiconductor
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Check for Price | No | Transferred | 65.536 kbit | 8 | 8KX8 | 5 V | 150 ns | STANDARD SRAM | COMMON | 1 | 1 | 8000 | 8.192 k | ASYNCHRONOUS | 3-STATE | YES | PARALLEL | 75 µA | 2 V | 48 µA | 5.5 V | 4.5 V | CMOS | MILITARY | R-GDIP-T28 | Not Qualified | e0 | 125 °C | -55 °C | 38535Q/M;38534H;883B | 28 | CERAMIC, GLASS-SEALED | DIP | DIP28,.6 | RECTANGULAR | IN-LINE | NO | Tin/Lead (Sn/Pb) | THROUGH-HOLE | 2.54 mm | DUAL | HARRIS SEMICONDUCTOR | DIP, DIP28,.6 | unknown | 3A001.A.2.C | 8542.32.00.41 |