Parametric results for: HN58C256AP85E under EEPROMs

All Filters Access Time-Max Command User Interface Data Polling Endurance JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Moisture Sensitivity Level Number of Functions Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Package Body Material Package Code Package Equivalence Code Package Shape Package Style Page Size Supply Voltage-Nom (Vsup) Access Time-Max (1)

85 ns 1

1 hit Apply

NO 1

1 hit Apply

YES 1

1 hit Apply

100000.0 Write/Erase Cycles 1

1 hit Apply

R-PDIP-T28 1

1 hit Apply

e6 1

1 hit Apply

35.6 mm 1

1 hit Apply

Manufacturer (1)

Renesas Electronics Corporation 1

1 hit Apply

Memory Density (1)

262.144 kbit 1

1 hit Apply

EEPROM 1

1 hit Apply

Memory Width (1)

8 1

1 hit Apply

1 1

1 hit Apply

1.0 1

1 hit Apply

28 1

1 hit Apply

32.768 k 1

1 hit Apply

32000.0 1

1 hit Apply

ASYNCHRONOUS 1

1 hit Apply

70.0 °C 1

1 hit Apply

0.0 °C 1

1 hit Apply

Organization (1)

32KX8 1

1 hit Apply

PLASTIC/EPOXY 1

1 hit Apply

DIP 1

1 hit Apply

DIP28,.6 1

1 hit Apply

RECTANGULAR 1

1 hit Apply

IN-LINE 1

1 hit Apply

64 words 1

1 hit Apply

Supply Voltage-Nom (Vsup) (1)

5 V 1

1 hit Apply