Parametric results for: HUF75631SK8T under Power Field-Effect Transistors

All Filters Additional Feature Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

ULTRA LOW RESISTANCE 1

5 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 5

5 hits Apply

DS Breakdown Voltage-Min (1)

100 V 5

5 hits Apply

Drain Current-Max (ID) (1)

5.5 A 5

5 hits Apply

Drain-source On Resistance-Max (1)

39 mΩ 5

5 hits Apply

METAL-OXIDE SEMICONDUCTOR 5

5 hits Apply

MS-012AA 5

5 hits Apply

R-PDSO-G8 5

5 hits Apply

e0 1 e3 4

5 hits Apply

Manufacturer (3)

Fairchild Semiconductor Corporation 2 Intersil Corporation 1 Rochester Electronics LLC 2

5 hits Apply

1 3

5 hits Apply

Number of Elements (1)

1 5

5 hits Apply

Number of Terminals (1)

8 5

5 hits Apply

ENHANCEMENT MODE 5

5 hits Apply

150.0 °C 2 175.0 °C 1

Min (°C) - Max (°C)

5 hits Apply

PLASTIC/EPOXY 5

5 hits Apply

RECTANGULAR 5

5 hits Apply

SMALL OUTLINE 5

5 hits Apply

Active 2 Obsolete 2 Transferred 1

5 hits Apply

Yes 2

5 hits Apply

260 1 NOT SPECIFIED 1

5 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 5

5 hits Apply

2.5 W 3

5 hits Apply

Surface Mount (1)

YES 5

5 hits Apply