Parametric results for: HY51V16160HGJ-7 under DRAMs

All Filters Access Mode Access Time-Max Additional Feature I/O Type JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Number of Functions Number of Ports Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Refresh Cycles Supply Voltage-Nom (Vsup) Access Mode (1)

FAST PAGE 1

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Access Time-Max (1)

70 ns 1

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RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH 1

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COMMON 1

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R-PDSO-J42 1

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e0 1

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27.06 mm 1

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Manufacturer (1)

SK Hynix Inc 1

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Memory Density (1)

16.7772 Mbit 1

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FAST PAGE DRAM 1

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Memory Width (1)

16 1

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1.0 1

1 hit Apply

1 1

1 hit Apply

42 1

1 hit Apply

1.0486 M 1

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1000000.0 1

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ASYNCHRONOUS 1

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70.0 °C 1

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0.0 °C 1

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Organization (1)

1MX16 1

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3-STATE 1

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PLASTIC/EPOXY 1

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SOJ 1

1 hit Apply

SOJ42,.44 1

1 hit Apply

RECTANGULAR 1

1 hit Apply

SMALL OUTLINE 1

1 hit Apply

Refresh Cycles (1)

4096 1

1 hit Apply

Supply Voltage-Nom (Vsup) (1)

3.3 V 1

1 hit Apply