Parametric results for: HY51V16410ASLJ-60 under DRAMs

All Filters Access Mode Access Time-Max Additional Feature JESD-30 Code Length Manufacturer Memory Density Memory IC Type Memory Width Number of Functions Number of Ports Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Shape Package Style Refresh Cycles Supply Voltage-Nom (Vsup) Access Mode (1)

FAST PAGE 1

1 hit Apply

Access Time-Max (1)

60 ns 1

1 hit Apply

RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH 1

1 hit Apply

R-PDSO-J24 1

1 hit Apply

17.15 mm 1

1 hit Apply

Manufacturer (1)

SK Hynix Inc 1

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Memory Density (1)

16.7772 Mbit 1

1 hit Apply

FAST PAGE DRAM 1

1 hit Apply

Memory Width (1)

4 1

1 hit Apply

1.0 1

1 hit Apply

1 1

1 hit Apply

24 1

1 hit Apply

4.1943 M 1

1 hit Apply

4000000.0 1

1 hit Apply

ASYNCHRONOUS 1

1 hit Apply

70.0 °C 1

1 hit Apply

0.0 °C 1

1 hit Apply

Organization (1)

4MX4 1

1 hit Apply

3-STATE 1

1 hit Apply

PLASTIC/EPOXY 1

1 hit Apply

SOJ 1

1 hit Apply

RECTANGULAR 1

1 hit Apply

SMALL OUTLINE 1

1 hit Apply

Refresh Cycles (1)

4096 1

1 hit Apply

Supply Voltage-Nom (Vsup) (1)

3.3 V 1

1 hit Apply