Parametric results for: HYB3165805J-60 under DRAMs

All Filters Access Mode Access Time-Max Additional Feature JESD-30 Code Length Manufacturer Memory Density Memory IC Type Memory Width Number of Functions Number of Ports Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Shape Package Style Refresh Cycles Supply Voltage-Nom (Vsup) Access Mode (1)

FAST PAGE WITH EDO 2

2 hits Apply

Access Time-Max (1)

60 ns 2

2 hits Apply

RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH 2

2 hits Apply

R-PDSO-J34 2

2 hits Apply

22.25 mm 1

2 hits Apply

Manufacturer (2)

Infineon Technologies AG 1 Siemens 1

2 hits Apply

Memory Density (1)

67.1089 Mbit 2

2 hits Apply

EDO DRAM 2

2 hits Apply

Memory Width (1)

8 2

2 hits Apply

1.0 2

2 hits Apply

1 2

2 hits Apply

34 2

2 hits Apply

8.3886 M 2

2 hits Apply

8000000.0 2

2 hits Apply

ASYNCHRONOUS 2

2 hits Apply

70.0 °C 2

2 hits Apply

0.0 °C 2

2 hits Apply

Organization (1)

8MX8 2

2 hits Apply

3-STATE 1

2 hits Apply

PLASTIC/EPOXY 2

2 hits Apply

SOJ 1

2 hits Apply

RECTANGULAR 2

2 hits Apply

SMALL OUTLINE 2

2 hits Apply

Refresh Cycles (1)

4096 1

2 hits Apply

Supply Voltage-Nom (Vsup) (1)

3.3 V 2

2 hits Apply