Parametric results for: HYI0UGG0MF1-6SS0E under Other Memory ICs

All Filters Additional Feature JESD-30 Code Length Manufacturer Memory Density Memory IC Type Memory Width Number of Functions Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Package Body Material Package Code Package Shape Package Style Supply Voltage-Nom (Vsup)

NAND FLASH IS ORGANISED AS 128M X 8 1

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R-PBGA-B149 1

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14 mm 1

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Manufacturer (1)

SK Hynix Inc 1

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Memory Density (1)

536.8709 Mbit 1

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MEMORY CIRCUIT 1

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Memory Width (1)

16 1

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1.0 1

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149 1

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33.5544 M 1

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3.2E7 1

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SYNCHRONOUS 1

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85.0 °C 1

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-30.0 °C 1

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Organization (1)

32MX16 1

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PLASTIC/EPOXY 1

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LFBGA 1

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RECTANGULAR 1

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GRID ARRAY, LOW PROFILE, FINE PITCH 1

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Supply Voltage-Nom (Vsup) (1)

1.8 V 1

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