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IDT6116SA55TDB
Integrated Device Technology Inc
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Check for Price | No | No | Transferred | 16.384 kbit | 8 | 2KX8 | 5 V | 55 ns | STANDARD SRAM | COMMON | 1 | 1 | 2000 | 2.048 k | ASYNCHRONOUS | 3-STATE | YES | PARALLEL | 10 mA | 4.5 V | 100 µA | 5.5 V | 4.5 V | CMOS | MILITARY | R-GDIP-T24 | Not Qualified | e0 | 125 °C | -55 °C | MIL-STD-883 Class B | 24 | CERAMIC, GLASS-SEALED | DIP | DIP24,.3 | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | 5.08 mm | 32.004 mm | 7.62 mm | INTEGRATED DEVICE TECHNOLOGY INC | DIP | DIP, DIP24,.3 | 24 | not_compliant | 3A001.A.2.C | 8542.32.00.41 | 1988-01-01 | ||
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IDT6116SA55TDBRT
Integrated Device Technology Inc
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Check for Price | No | No | Obsolete | 16.384 kbit | 8 | 2KX8 | 5 V | 55 ns | STANDARD SRAM | COMMON | 2000 | 2.048 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 100 mA | 4.5 V | 100 µA | CMOS | MILITARY | R-XDIP-T24 | Not Qualified | e0 | 125 °C | -55 °C | 38535Q/M;38534H;883B | 24 | CERAMIC | DIP | DIP24,.6 | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | INTEGRATED DEVICE TECHNOLOGY INC | not_compliant | 3A001.A.2.C | 8542.32.00.41 |