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IDT70T651S15BCG8
Integrated Device Technology Inc
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Check for Price | Yes | Yes | Transferred | 9.4372 Mbit | 36 | 256KX36 | 2.5 V | 15 ns | MULTI-PORT SRAM | COMMON | 1 | 2 | 256000 | 262.144 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 10 mA | 2.4 V | 305 µA | 2.6 V | 2.4 V | CMOS | COMMERCIAL | S-PBGA-B256 | Not Qualified | e1 | 3 | 70 °C | 260 | 30 | 256 | PLASTIC/EPOXY | LBGA | BGA256,16X16,40 | SQUARE | GRID ARRAY, LOW PROFILE | YES | Tin/Silver/Copper (Sn/Ag/Cu) | BALL | 1 mm | BOTTOM | 1.5 mm | 17 mm | 17 mm | INTEGRATED DEVICE TECHNOLOGY INC | BGA | LBGA, BGA256,16X16,40 | 256 | compliant | 3A991.B.2.A | 8542.32.00.41 | ||
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IDT70T651S15BCG
Integrated Device Technology Inc
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Check for Price | Yes | Yes | Transferred | 9.4372 Mbit | 36 | 256KX36 | 2.5 V | 15 ns | MULTI-PORT SRAM | COMMON | 1 | 2 | 256000 | 262.144 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 10 mA | 2.4 V | 305 µA | 2.6 V | 2.4 V | CMOS | COMMERCIAL | S-PBGA-B256 | Not Qualified | e1 | 3 | 70 °C | 260 | 30 | 256 | PLASTIC/EPOXY | LBGA | BGA256,16X16,40 | SQUARE | GRID ARRAY, LOW PROFILE | YES | Tin/Silver/Copper (Sn/Ag/Cu) | BALL | 1 mm | BOTTOM | 1.5 mm | 17 mm | 17 mm | INTEGRATED DEVICE TECHNOLOGY INC | BGA | LBGA, BGA256,16X16,40 | 256 | compliant | 3A991.B.2.A | 8542.32.00.41 | ||
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IDT70T651S15BC8
Integrated Device Technology Inc
|
Check for Price | No | No | Transferred | 9.4372 Mbit | 36 | 256KX36 | 2.5 V | 15 ns | MULTI-PORT SRAM | COMMON | 1 | 2 | 256000 | 262.144 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 10 mA | 2.4 V | 305 µA | 2.6 V | 2.4 V | CMOS | COMMERCIAL | S-PBGA-B256 | Not Qualified | e0 | 3 | 70 °C | 225 | 20 | 256 | PLASTIC/EPOXY | LBGA | BGA256,16X16,40 | SQUARE | GRID ARRAY, LOW PROFILE | YES | Tin/Lead (Sn63Pb37) | BALL | 1 mm | BOTTOM | 1.5 mm | 17 mm | 17 mm | INTEGRATED DEVICE TECHNOLOGY INC | BGA | LBGA, BGA256,16X16,40 | 256 | not_compliant | 3A991.B.2.A | 8542.32.00.41 | ||
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IDT70T651S15BC
Integrated Device Technology Inc
|
Check for Price | No | No | Transferred | 9.4372 Mbit | 36 | 256KX36 | 2.5 V | 15 ns | MULTI-PORT SRAM | COMMON | 1 | 2 | 256000 | 262.144 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 10 mA | 2.4 V | 305 µA | 2.6 V | 2.4 V | CMOS | COMMERCIAL | S-PBGA-B256 | Not Qualified | e0 | 3 | 70 °C | 225 | 20 | 256 | PLASTIC/EPOXY | LBGA | BGA256,16X16,40 | SQUARE | GRID ARRAY, LOW PROFILE | YES | Tin/Lead (Sn63Pb37) | BALL | 1 mm | BOTTOM | 1.5 mm | 17 mm | 17 mm | INTEGRATED DEVICE TECHNOLOGY INC | BGA | LBGA, BGA256,16X16,40 | 256 | not_compliant | 3A991.B.2.A | 8542.32.00.41 |