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IDT7130LA35PDGB
Integrated Device Technology Inc
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Check for Price | Yes | Yes | Transferred | 8.192 kbit | 8 | 1KX8 | 5 V | 35 ns | MULTI-PORT SRAM | COMMON | 1 | 2 | 1000 | 1.024 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 4 mA | 2 V | 170 µA | 5.5 V | 4.5 V | CMOS | MILITARY | R-PDIP-T48 | Not Qualified | e3 | 125 °C | -55 °C | MIL-PRF-38535 Class Q | 48 | PLASTIC/EPOXY | DIP | DIP48,.6 | RECTANGULAR | IN-LINE | NO | MATTE TIN | THROUGH-HOLE | 2.54 mm | DUAL | 5.08 mm | 61.849 mm | 15.24 mm | INTEGRATED DEVICE TECHNOLOGY INC | DIP | DIP, DIP48,.6 | 48 | compliant | 3A001.A.2.C | 8542.32.00.41 | |||
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IDT7130LA35PDG
Integrated Device Technology Inc
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Check for Price | Yes | Yes | Transferred | 8.192 kbit | 8 | 1KX8 | 5 V | 35 ns | MULTI-PORT SRAM | COMMON | 1 | 2 | 1000 | 1.024 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 1.5 mA | 2 V | 120 µA | 5.5 V | 4.5 V | CMOS | COMMERCIAL | R-PDIP-T48 | Not Qualified | e3 | 70 °C | 48 | PLASTIC/EPOXY | DIP | DIP48,.6 | RECTANGULAR | IN-LINE | NO | MATTE TIN | THROUGH-HOLE | 2.54 mm | DUAL | 5.08 mm | 61.849 mm | 15.24 mm | INTEGRATED DEVICE TECHNOLOGY INC | DIP | DIP, DIP48,.6 | 48 | compliant | EAR99 | 8542.32.00.41 | 1992-01-01 | ||||
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IDT7130LA35PDGB8
Integrated Device Technology Inc
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Check for Price | Yes | Yes | Obsolete | 8.192 kbit | 8 | 1KX8 | 5 V | 35 ns | MULTI-PORT SRAM | COMMON | 2 | 1000 | 1.024 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 4 mA | 2 V | 170 µA | CMOS | MILITARY | R-PDIP-T48 | Not Qualified | e3 | 125 °C | -55 °C | 38535Q/M;38534H;883B | 48 | PLASTIC/EPOXY | DIP | DIP48,.6 | RECTANGULAR | IN-LINE | NO | MATTE TIN | THROUGH-HOLE | 2.54 mm | DUAL | INTEGRATED DEVICE TECHNOLOGY INC | unknown | 3A001.A.2.C | 8542.32.00.41 |