Parametric results for: IDT7140SA25JG under SRAMs

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Manufacturer Part Number: idt7140sa25jg
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IDT7140SA25JGB8
Integrated Device Technology Inc
Check for Price Yes Yes Obsolete 8.192 kbit 8 1KX8 5 V 25 ns MULTI-PORT SRAM COMMON 2 1000 1.024 k ASYNCHRONOUS 3-STATE PARALLEL 30 mA 4.5 V 280 µA CMOS MILITARY S-PQCC-J52 Not Qualified e3 1 125 °C -55 °C 260 38535Q/M;38534H;883B 30 52 PLASTIC/EPOXY QCCJ LDCC52,.8SQ SQUARE CHIP CARRIER YES Matte Tin (Sn) - annealed J BEND 1.27 mm QUAD INTEGRATED DEVICE TECHNOLOGY INC unknown 3A001.A.2.C 8542.32.00.41
IDT7140SA25JG
Integrated Device Technology Inc
Check for Price Yes Yes Transferred 8.192 kbit 8 1KX8 5 V 25 ns MULTI-PORT SRAM COMMON 1 2 1000 1.024 k ASYNCHRONOUS 3-STATE PARALLEL 15 mA 4.5 V 220 µA 5.5 V 4.5 V CMOS COMMERCIAL S-PQCC-J52 Not Qualified e3 1 70 °C 260 30 52 PLASTIC/EPOXY QCCJ LDCC52,.8SQ SQUARE CHIP CARRIER YES Matte Tin (Sn) - annealed J BEND 1.27 mm QUAD 4.572 mm 19.1262 mm 19.1262 mm INTEGRATED DEVICE TECHNOLOGY INC compliant EAR99 8542.32.00.41 LCC QCCJ, LDCC52,.8SQ 52
IDT7140SA25JG8
Integrated Device Technology Inc
Check for Price Yes Yes Transferred 8.192 kbit 8 1KX8 5 V 25 ns MULTI-PORT SRAM COMMON 1 2 1000 1.024 k ASYNCHRONOUS 3-STATE PARALLEL 15 mA 4.5 V 220 µA 5.5 V 4.5 V CMOS COMMERCIAL S-PQCC-J52 Not Qualified e3 1 70 °C 260 30 52 PLASTIC/EPOXY QCCJ LDCC52,.8SQ SQUARE CHIP CARRIER YES Matte Tin (Sn) - annealed J BEND 1.27 mm QUAD 4.57 mm 19.1262 mm 19.1262 mm INTEGRATED DEVICE TECHNOLOGY INC compliant EAR99 8542.32.00.41 LCC QCCJ, LDCC52,.8SQ 52
IDT7140SA25JGI
Integrated Device Technology Inc
Check for Price Yes Yes Transferred 8.192 kbit 8 1KX8 5 V 25 ns MULTI-PORT SRAM COMMON 1 2 1000 1.024 k ASYNCHRONOUS 3-STATE PARALLEL 30 mA 4.5 V 280 µA 5.5 V 4.5 V CMOS INDUSTRIAL S-PQCC-J52 Not Qualified e3 1 85 °C -40 °C 260 30 52 PLASTIC/EPOXY QCCJ LDCC52,.8SQ SQUARE CHIP CARRIER YES Matte Tin (Sn) - annealed J BEND 1.27 mm QUAD 4.572 mm 19.1262 mm 19.1262 mm INTEGRATED DEVICE TECHNOLOGY INC compliant EAR99 8542.32.00.41 LCC QCCJ, LDCC52,.8SQ 52
IDT7140SA25JGB
Integrated Device Technology Inc
Check for Price Yes Yes Transferred 8.192 kbit 8 1KX8 5 V 25 ns MULTI-PORT SRAM COMMON 1 2 1000 1.024 k ASYNCHRONOUS 3-STATE PARALLEL 30 mA 4.5 V 280 µA 5.5 V 4.5 V CMOS MILITARY S-PQCC-J52 Not Qualified e3 1 125 °C -55 °C 260 MIL-PRF-38535 Class Q 30 52 PLASTIC/EPOXY QCCJ LDCC52,.8SQ SQUARE CHIP CARRIER YES Matte Tin (Sn) - annealed J BEND 1.27 mm QUAD 4.572 mm 19.1262 mm 19.1262 mm INTEGRATED DEVICE TECHNOLOGY INC compliant 3A001.A.2.C 8542.32.00.41 LCC QCCJ, LDCC52,.8SQ 52
IDT7140SA25JGI8
Integrated Device Technology Inc
Check for Price Yes Yes Obsolete 8.192 kbit 8 1KX8 5 V 25 ns MULTI-PORT SRAM COMMON 2 1000 1.024 k ASYNCHRONOUS 3-STATE PARALLEL 30 mA 4.5 V 280 µA CMOS INDUSTRIAL S-PQCC-J52 Not Qualified e3 1 85 °C -40 °C 260 30 52 PLASTIC/EPOXY QCCJ LDCC52,.8SQ SQUARE CHIP CARRIER YES Matte Tin (Sn) - annealed J BEND 1.27 mm QUAD INTEGRATED DEVICE TECHNOLOGY INC unknown EAR99 8542.32.00.41