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Parametric results for: IDT71421SA55J under SRAMs

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Manufacturer Part Number: idt71421sa55j
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IDT71421SA55J
 Integrated Device Technology Inc 		Check for Price No No Obsolete 16.384 kbit 8 2KX8 5 V 55 ns MULTI-PORT SRAM INTERRUPT FLAG; AUTOMATIC POWER-DOWN COMMON 1 2 2000 2.048 k ASYNCHRONOUS 3-STATE PARALLEL 15 mA 4.5 V 155 µA 5.5 V 4.5 V CMOS COMMERCIAL S-PQCC-J52 Not Qualified e0 3 70 °C 225 20 52 PLASTIC/EPOXY QCCJ LDCC52,.8SQ SQUARE CHIP CARRIER YES TIN LEAD J BEND 1.27 mm QUAD 4.572 mm 19.1262 mm 19.1262 mm INTEGRATED DEVICE TECHNOLOGY INC LCC 0.750 X 0.750 INCH, 0.170 INCH HEIGHT, PLASTIC, LCC-52 52 not_compliant EAR99 8542.32.00.41
IDT71421SA55JG
 Integrated Device Technology Inc 		Check for Price Yes Yes Transferred 16.384 kbit 8 2KX8 5 V 55 ns MULTI-PORT SRAM AUTOMATIC POWER DOWN COMMON 1 2 2000 2.048 k ASYNCHRONOUS 3-STATE PARALLEL 15 mA 4.5 V 155 µA 5.5 V 4.5 V CMOS COMMERCIAL S-PQCC-J52 Not Qualified e3 1 70 °C 260 30 52 PLASTIC/EPOXY QCCJ LDCC52,.8SQ SQUARE CHIP CARRIER YES Matte Tin (Sn) - annealed J BEND 1.27 mm QUAD 4.572 mm 19.1262 mm 19.1262 mm INTEGRATED DEVICE TECHNOLOGY INC LCC QCCJ, LDCC52,.8SQ 52 compliant EAR99 8542.32.00.41
IDT71421SA55JGI8
 Integrated Device Technology Inc 		Check for Price Yes Yes Transferred 16.384 kbit 8 2KX8 5 V 55 ns MULTI-PORT SRAM INTERRUPT FLAG; AUTOMATIC POWER-DOWN COMMON 1 2 2000 2.048 k ASYNCHRONOUS 3-STATE PARALLEL 30 mA 4.5 V 190 µA 5.5 V 4.5 V CMOS INDUSTRIAL S-PQCC-J52 Not Qualified e3 1 85 °C -40 °C 260 30 52 PLASTIC/EPOXY QCCJ LDCC52,.8SQ SQUARE CHIP CARRIER YES Matte Tin (Sn) - annealed J BEND 1.27 mm QUAD 4.572 mm 19.1262 mm 19.1262 mm INTEGRATED DEVICE TECHNOLOGY INC LCC QCCJ, LDCC52,.8SQ 52 compliant EAR99 8542.32.00.41
IDT71421SA55JI
 Integrated Device Technology Inc 		Check for Price No No Obsolete 16.384 kbit 8 2KX8 5 V 55 ns MULTI-PORT SRAM INTERRUPT FLAG; AUTOMATIC POWER-DOWN COMMON 1 2 2000 2.048 k ASYNCHRONOUS 3-STATE PARALLEL 30 mA 4.5 V 190 µA 5.5 V 4.5 V CMOS INDUSTRIAL S-PQCC-J52 Not Qualified e0 3 85 °C -40 °C 225 20 52 PLASTIC/EPOXY QCCJ LDCC52,.8SQ SQUARE CHIP CARRIER YES TIN LEAD J BEND 1.27 mm QUAD 4.572 mm 19.1262 mm 19.1262 mm INTEGRATED DEVICE TECHNOLOGY INC LCC 0.750 X 0.750 INCH, 0.170 INCH HEIGHT, PLASTIC, LCC-52 52 not_compliant EAR99 8542.32.00.41
IDT71421SA55JGI
 Integrated Device Technology Inc 		Check for Price Yes Yes Transferred 16.384 kbit 8 2KX8 5 V 55 ns MULTI-PORT SRAM AUTOMATIC POWER DOWN COMMON 1 2 2000 2.048 k ASYNCHRONOUS 3-STATE PARALLEL 30 mA 4.5 V 190 µA 5.5 V 4.5 V CMOS INDUSTRIAL S-PQCC-J52 Not Qualified e3 1 85 °C -40 °C 260 30 52 PLASTIC/EPOXY QCCJ LDCC52,.8SQ SQUARE CHIP CARRIER YES Matte Tin (Sn) - annealed J BEND 1.27 mm QUAD 4.572 mm 19.1262 mm 19.1262 mm INTEGRATED DEVICE TECHNOLOGY INC LCC QCCJ, LDCC52,.8SQ 52 compliant EAR99 8542.32.00.41
IDT71421SA55JI8
 Integrated Device Technology Inc 		Check for Price No No Obsolete 16.384 kbit 8 2KX8 5 V 55 ns MULTI-PORT SRAM INTERRUPT FLAG; AUTOMATIC POWER-DOWN COMMON 1 2 2000 2.048 k ASYNCHRONOUS 3-STATE PARALLEL 10 mA 4.5 V 190 µA 5.5 V 4.5 V CMOS INDUSTRIAL S-PQCC-J52 Not Qualified e0 3 85 °C -40 °C 225 20 52 PLASTIC/EPOXY QCCJ LDCC52,.8SQ SQUARE CHIP CARRIER YES TIN LEAD J BEND 1.27 mm QUAD 4.572 mm 19.1262 mm 19.1262 mm INTEGRATED DEVICE TECHNOLOGY INC LCC 0.750 X 0.750 INCH, 0.170 INCH HEIGHT, PLASTIC, LCC-52 52 not_compliant EAR99 8542.32.00.41
IDT71421SA55J8
 Integrated Device Technology Inc 		Check for Price No No Obsolete 16.384 kbit 8 2KX8 5 V 55 ns MULTI-PORT SRAM INTERRUPT FLAG; AUTOMATIC POWER-DOWN COMMON 1 2 2000 2.048 k ASYNCHRONOUS 3-STATE PARALLEL 15 mA 4.5 V 155 µA 5.5 V 4.5 V CMOS COMMERCIAL S-PQCC-J52 Not Qualified e0 3 70 °C 225 20 52 PLASTIC/EPOXY QCCJ LDCC52,.8SQ SQUARE CHIP CARRIER YES TIN LEAD J BEND 1.27 mm QUAD 4.572 mm 19.1262 mm 19.1262 mm INTEGRATED DEVICE TECHNOLOGY INC LCC 0.750 X 0.750 INCH, 0.170 INCH HEIGHT, PLASTIC, LCC-52 52 not_compliant EAR99 8542.32.00.41
IDT71421SA55JG8
 Integrated Device Technology Inc 		Check for Price Yes Yes Transferred 16.384 kbit 8 2KX8 5 V 55 ns MULTI-PORT SRAM INTERRUPT FLAG; AUTOMATIC POWER-DOWN COMMON 1 2 2000 2.048 k ASYNCHRONOUS 3-STATE PARALLEL 15 mA 4.5 V 155 µA 5.5 V 4.5 V CMOS COMMERCIAL S-PQCC-J52 Not Qualified e3 1 70 °C 260 30 52 PLASTIC/EPOXY QCCJ LDCC52,.8SQ SQUARE CHIP CARRIER YES Matte Tin (Sn) - annealed J BEND 1.27 mm QUAD 4.572 mm 19.1262 mm 19.1262 mm INTEGRATED DEVICE TECHNOLOGY INC LCC QCCJ, LDCC52,.8SQ 52 compliant EAR99 8542.32.00.41