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IDT71V3557SA85BQG
Integrated Device Technology Inc
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Check for Price | Yes | Obsolete | 4.7186 Mbit | 36 | 128KX36 | 3.3 V | 8.5 ns | 90 MHz | CACHE SRAM | FLOW-THROUGH ARCHITECTURE | COMMON | 1 | 128000 | 131.072 k | SYNCHRONOUS | 3-STATE | PARALLEL | 40 mA | 3.14 V | 225 µA | 3.465 V | 3.135 V | CMOS | COMMERCIAL | R-PBGA-B165 | Not Qualified | e1 | 3 | 70 °C | 260 | 30 | 165 | PLASTIC/EPOXY | TBGA | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, THIN PROFILE | YES | Tin/Silver/Copper (Sn/Ag/Cu) | BALL | 1 mm | BOTTOM | 1.2 mm | 15 mm | 13 mm | INTEGRATED DEVICE TECHNOLOGY INC | BGA | 13 X 15 MM, ROHS COMPLIANT, FBGA-165 | 165 | unknown | 3A991.B.2.A | 8542.32.00.41 | |||||
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IDT71V3557S85BG8
Integrated Device Technology Inc
|
Check for Price | No | No | Transferred | 4.7186 Mbit | 36 | 128KX36 | 3.3 V | 8.5 ns | 90 MHz | ZBT SRAM | FLOW-THROUGH ARCHITECTURE | COMMON | 1 | 128000 | 131.072 k | SYNCHRONOUS | 3-STATE | PARALLEL | 40 mA | 3.14 V | 225 µA | 3.465 V | 3.135 V | CMOS | COMMERCIAL | R-PBGA-B119 | Not Qualified | e0 | 3 | 70 °C | 225 | 20 | 119 | PLASTIC/EPOXY | BGA | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | YES | Tin/Lead (Sn63Pb37) | BALL | 1.27 mm | BOTTOM | 2.36 mm | 22 mm | 14 mm | INTEGRATED DEVICE TECHNOLOGY INC | BGA | BGA, BGA119,7X17,50 | 119 | not_compliant | 3A991.B.2.A | 8542.32.00.41 | 1998-08-01 | |||
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IDT71V3557SA80BGI
Integrated Device Technology Inc
|
Check for Price | No | Obsolete | 4.7186 Mbit | 36 | 128KX36 | 3.3 V | 8 ns | 95 MHz | ZBT SRAM | FLOW-THROUGH ARCHITECTURE | COMMON | 1 | 128000 | 131.072 k | SYNCHRONOUS | 3-STATE | PARALLEL | 45 mA | 3.14 V | 260 µA | 3.465 V | 3.135 V | CMOS | INDUSTRIAL | R-PBGA-B119 | Not Qualified | e0 | 3 | 85 °C | -40 °C | 225 | 20 | 119 | PLASTIC/EPOXY | BGA | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | YES | TIN LEAD | BALL | 1.27 mm | BOTTOM | 2.36 mm | 22 mm | 14 mm | INTEGRATED DEVICE TECHNOLOGY INC | BGA | 14 X 22 MM, PLASTIC, BGA-119 | 119 | not_compliant | 3A991.B.2.A | 8542.32.00.41 | ||||
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IDT71V3557S80PFG
Integrated Device Technology Inc
|
Check for Price | Yes | Yes | Transferred | 4.7186 Mbit | 36 | 128KX36 | 3.3 V | 8 ns | 95 MHz | CACHE SRAM | FLOW-THROUGH ARCHITECTURE | COMMON | 1 | 128000 | 131.072 k | SYNCHRONOUS | 3-STATE | PARALLEL | 40 mA | 3.14 V | 250 µA | 3.465 V | 3.135 V | CMOS | COMMERCIAL | R-PQFP-G100 | Not Qualified | e3 | 3 | 70 °C | 260 | 30 | 100 | PLASTIC/EPOXY | LQFP | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | YES | Matte Tin (Sn) - annealed | GULL WING | 650 µm | QUAD | 1.6 mm | 20 mm | 14 mm | INTEGRATED DEVICE TECHNOLOGY INC | QFP | LQFP, QFP100,.63X.87 | 100 | compliant | 3A991.B.2.A | 8542.32.00.41 | 1998-08-01 | |||
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IDT71V3557S85PFG
Integrated Device Technology Inc
|
Check for Price | Yes | Yes | Transferred | 4.7186 Mbit | 36 | 128KX36 | 3.3 V | 8.5 ns | 90 MHz | CACHE SRAM | FLOW-THROUGH ARCHITECTURE | COMMON | 1 | 128000 | 131.072 k | SYNCHRONOUS | 3-STATE | PARALLEL | 40 mA | 3.14 V | 225 µA | 3.465 V | 3.135 V | CMOS | COMMERCIAL | R-PQFP-G100 | Not Qualified | e3 | 3 | 70 °C | 260 | 30 | 100 | PLASTIC/EPOXY | LQFP | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | YES | Matte Tin (Sn) - annealed | GULL WING | 650 µm | QUAD | 1.6 mm | 20 mm | 14 mm | INTEGRATED DEVICE TECHNOLOGY INC | QFP | LQFP, QFP100,.63X.87 | 100 | compliant | 3A991.B.2.A | 8542.32.00.41 | 1998-08-01 | |||
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IDT71V3557S85PFGI
Integrated Device Technology Inc
|
Check for Price | Yes | Yes | Transferred | 4.7186 Mbit | 36 | 128KX36 | 3.3 V | 8.5 ns | 90 MHz | CACHE SRAM | FLOW-THROUGH ARCHITECTURE | COMMON | 1 | 128000 | 131.072 k | SYNCHRONOUS | 3-STATE | PARALLEL | 45 mA | 3.14 V | 235 µA | 3.465 V | 3.135 V | CMOS | INDUSTRIAL | R-PQFP-G100 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 260 | 30 | 100 | PLASTIC/EPOXY | LQFP | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | YES | Matte Tin (Sn) - annealed | GULL WING | 650 µm | QUAD | 1.6 mm | 20 mm | 14 mm | INTEGRATED DEVICE TECHNOLOGY INC | QFP | LQFP, QFP100,.63X.87 | 100 | compliant | 3A991.B.2.A | 8542.32.00.41 | 1998-08-01 | ||
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IDT71V3557SA80BQG
Integrated Device Technology Inc
|
Check for Price | Yes | Obsolete | 4.7186 Mbit | 36 | 128KX36 | 3.3 V | 8 ns | 95 MHz | CACHE SRAM | FLOW-THROUGH ARCHITECTURE | COMMON | 1 | 128000 | 131.072 k | SYNCHRONOUS | 3-STATE | PARALLEL | 40 mA | 3.14 V | 250 µA | 3.465 V | 3.135 V | CMOS | COMMERCIAL | R-PBGA-B165 | Not Qualified | e1 | 3 | 70 °C | 260 | 30 | 165 | PLASTIC/EPOXY | TBGA | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, THIN PROFILE | YES | Tin/Silver/Copper (Sn/Ag/Cu) | BALL | 1 mm | BOTTOM | 1.2 mm | 15 mm | 13 mm | INTEGRATED DEVICE TECHNOLOGY INC | BGA | 13 X 15 MM, ROHS COMPLIANT, FBGA-165 | 165 | unknown | 3A991.B.2.A | 8542.32.00.41 | |||||
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IDT71V3557S80PFG8
Integrated Device Technology Inc
|
Check for Price | Yes | Yes | Transferred | 4.7186 Mbit | 36 | 128KX36 | 3.3 V | 8 ns | CACHE SRAM | FLOW-THROUGH ARCHITECTURE | 1 | 128000 | 131.072 k | SYNCHRONOUS | PARALLEL | 3.465 V | 3.135 V | CMOS | COMMERCIAL | R-PQFP-G100 | Not Qualified | e3 | 3 | 70 °C | NOT SPECIFIED | NOT SPECIFIED | 100 | PLASTIC/EPOXY | LQFP | RECTANGULAR | FLATPACK, LOW PROFILE | YES | Matte Tin (Sn) | GULL WING | 650 µm | QUAD | 1.6 mm | 20 mm | 14 mm | INTEGRATED DEVICE TECHNOLOGY INC | QFP | LQFP, | 100 | compliant | 3A991.B.2.A | 8542.32.00.41 | |||||||||||
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IDT71V3557S85PF
Integrated Device Technology Inc
|
Check for Price | No | Obsolete | 4.7186 Mbit | 36 | 128KX36 | 3.3 V | 8.5 ns | 90 MHz | ZBT SRAM | FLOW-THROUGH ARCHITECTURE | COMMON | 1 | 128000 | 131.072 k | SYNCHRONOUS | 3-STATE | PARALLEL | 40 mA | 3.14 V | 225 µA | 3.465 V | 3.135 V | CMOS | COMMERCIAL | R-PQFP-G100 | Not Qualified | e0 | 3 | 70 °C | 225 | 20 | 100 | PLASTIC/EPOXY | LQFP | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | YES | Tin/Lead (Sn85Pb15) | GULL WING | 650 µm | QUAD | 1.6 mm | 20 mm | 14 mm | INTEGRATED DEVICE TECHNOLOGY INC | QFP | 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100 | 100 | not_compliant | 3A991.B.2.A | 8542.32.00.41 | |||||
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IDT71V3557S75BG8
Integrated Device Technology Inc
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Check for Price | No | No | Transferred | 4.7186 Mbit | 36 | 128KX36 | 3.3 V | 7.5 ns | 100 MHz | ZBT SRAM | FLOW-THROUGH ARCHITECTURE | COMMON | 1 | 128000 | 131.072 k | SYNCHRONOUS | 3-STATE | PARALLEL | 40 mA | 3.14 V | 275 µA | 3.465 V | 3.135 V | CMOS | COMMERCIAL | R-PBGA-B119 | Not Qualified | e0 | 3 | 70 °C | 225 | 20 | 119 | PLASTIC/EPOXY | BGA | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | YES | Tin/Lead (Sn63Pb37) | BALL | 1.27 mm | BOTTOM | 2.36 mm | 22 mm | 14 mm | INTEGRATED DEVICE TECHNOLOGY INC | BGA | BGA, BGA119,7X17,50 | 119 | not_compliant | 3A991.B.2.A | 8542.32.00.41 | 1998-08-01 |