Parametric results for: IRLI510A under Power Field-Effect Transistors

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Manufacturer Part Number: irli510a
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IRLI510A
Samsung Semiconductor
Check for Price Obsolete N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 100 V 1 5.6 A 440 mΩ 62 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 37 W 20 A SWITCHING SILICON R-PSIP-T3 Not Qualified 175 °C PLASTIC/EPOXY RECTANGULAR IN-LINE THROUGH-HOLE SINGLE SAMSUNG SEMICONDUCTOR INC IN-LINE, R-PSIP-T3 unknown EAR99
IRLI510A
Fairchild Semiconductor Corporation
Check for Price No Obsolete N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 100 V 1 5.6 A 440 mΩ 62 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 37 W 20 A SWITCHING SILICON TO-262AA R-PSIP-T3 e0 Not Qualified 175 °C PLASTIC/EPOXY RECTANGULAR IN-LINE TIN LEAD THROUGH-HOLE SINGLE FAIRCHILD SEMICONDUCTOR CORP IN-LINE, R-PSIP-T3 unknown EAR99 TO-262AA 3
IRLI510ATU
Rochester Electronics LLC
Check for Price Yes Yes Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 100 V 1 5.6 A 440 mΩ 62 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 20 A SWITCHING SILICON TO-262AA R-PSIP-T3 e3 COMMERCIAL NOT APPLICABLE NOT APPLICABLE NOT APPLICABLE PLASTIC/EPOXY RECTANGULAR IN-LINE MATTE TIN THROUGH-HOLE SINGLE ROCHESTER ELECTRONICS LLC I2PAK-3 unknown TO-262AA 3
IRLI510ATU
Fairchild Semiconductor Corporation
Check for Price Yes Obsolete N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 100 V 1 5.6 A 440 mΩ 62 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 37 W 20 A SWITCHING SILICON TO-262AA R-PSIP-T3 e3 Not Qualified 175 °C PLASTIC/EPOXY RECTANGULAR IN-LINE MATTE TIN THROUGH-HOLE SINGLE FAIRCHILD SEMICONDUCTOR CORP I2PAK-3 not_compliant EAR99 TO-262AA 3