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IRLI510A
Samsung Semiconductor
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Check for Price | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 100 V | 1 | 5.6 A | 440 mΩ | 62 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 37 W | 20 A | SWITCHING | SILICON | R-PSIP-T3 | Not Qualified | 175 °C | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | THROUGH-HOLE | SINGLE | SAMSUNG SEMICONDUCTOR INC | IN-LINE, R-PSIP-T3 | unknown | EAR99 | ||||||||||||
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IRLI510A
Fairchild Semiconductor Corporation
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Check for Price | No | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 100 V | 1 | 5.6 A | 440 mΩ | 62 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 37 W | 20 A | SWITCHING | SILICON | TO-262AA | R-PSIP-T3 | e0 | Not Qualified | 175 °C | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | TIN LEAD | THROUGH-HOLE | SINGLE | FAIRCHILD SEMICONDUCTOR CORP | IN-LINE, R-PSIP-T3 | unknown | EAR99 | TO-262AA | 3 | ||||||
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IRLI510ATU
Rochester Electronics LLC
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Check for Price | Yes | Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 100 V | 1 | 5.6 A | 440 mΩ | 62 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 20 A | SWITCHING | SILICON | TO-262AA | R-PSIP-T3 | e3 | COMMERCIAL | NOT APPLICABLE | NOT APPLICABLE | NOT APPLICABLE | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | MATTE TIN | THROUGH-HOLE | SINGLE | ROCHESTER ELECTRONICS LLC | I2PAK-3 | unknown | TO-262AA | 3 | |||||
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IRLI510ATU
Fairchild Semiconductor Corporation
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Check for Price | Yes | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 100 V | 1 | 5.6 A | 440 mΩ | 62 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 37 W | 20 A | SWITCHING | SILICON | TO-262AA | R-PSIP-T3 | e3 | Not Qualified | 175 °C | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | MATTE TIN | THROUGH-HOLE | SINGLE | FAIRCHILD SEMICONDUCTOR CORP | I2PAK-3 | not_compliant | EAR99 | TO-262AA | 3 |