Parametric results for: IS25C04-3P under EEPROMs

All Filters Clock Frequency-Max (fCLK) Data Retention Time-Min Endurance JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Moisture Sensitivity Level Number of Functions Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Package Body Material Package Code Package Equivalence Code Package Shape Package Style Supply Voltage-Nom (Vsup) Clock Frequency-Max (fCLK) (1)

5 MHz 4

4 hits Apply

100 4

4 hits Apply

1000000.0 Write/Erase Cycles 4

4 hits Apply

R-PDIP-T8 4

4 hits Apply

e0 3 e3 1

4 hits Apply

9.3218 mm 2 9.325 mm 2

Min (mm) - Max (mm)

4 hits Apply

Manufacturer (1)

Integrated Silicon Solution Inc 4

4 hits Apply

Memory Density (1)

4.096 kbit 4

4 hits Apply

EEPROM 4

4 hits Apply

Memory Width (1)

8 4

4 hits Apply

3 4

4 hits Apply

1.0 4

4 hits Apply

8 4

4 hits Apply

512 words 4

4 hits Apply

512.0 4

4 hits Apply

SYNCHRONOUS 4

4 hits Apply

70.0 °C 1 85.0 °C 1 125.0 °C 2

Min (°C) - Max (°C)

4 hits Apply

-40.0 °C 3 0.0 °C 1

Min (°C) - Max (°C)

4 hits Apply

Organization (1)

512X8 4

4 hits Apply

PLASTIC/EPOXY 4

4 hits Apply

DIP 4

4 hits Apply

DIP8,.3 4

4 hits Apply

RECTANGULAR 4

4 hits Apply

IN-LINE 4

4 hits Apply

Supply Voltage-Nom (Vsup) (1)

5 V 4

4 hits Apply