Parametric results for: IS43DR16320D-3DBL under DRAMs

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Manufacturer Part Number: is43dr16320d3dbl
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IS43DR16320D-3DBL
Integrated Silicon Solution Inc
$2.7357 Yes Not Recommended 536.8709 Mbit 16 32MX16 1.8 V 450 ps 333 MHz 8192 FOUR BANK PAGE BURST DDR2 DRAM PROGRAMMABLE CAS LATENCY COMMON 4,8 1 1 32000000 33.5544 M SYNCHRONOUS 3-STATE 4,8 25 mA 230 µA 1.9 V 1.7 V CMOS OTHER R-PBGA-B84 Not Qualified e1 85 °C 84 PLASTIC/EPOXY TFBGA BGA84,9X15,32 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES Tin/Silver/Copper (Sn/Ag/Cu) BALL 800 µm BOTTOM 1.2 mm 12.5 mm 8 mm INTEGRATED SILICON SOLUTION INC TFBGA, BGA84,9X15,32 compliant EAR99 8542.32.00.28 Integrated Silicon Solution Inc.
IS43DR16320D-3DBLI
Integrated Silicon Solution Inc
$6.0882 Yes Not Recommended 536.8709 Mbit 16 32MX16 1.8 V 450 ps 333 MHz 8192 FOUR BANK PAGE BURST DDR2 DRAM PROGRAMMABLE CAS LATENCY COMMON 4,8 1 1 32000000 33.5544 M SYNCHRONOUS 3-STATE 4,8 25 mA 230 µA 1.9 V 1.7 V CMOS INDUSTRIAL R-PBGA-B84 Not Qualified e1 85 °C -40 °C 260 30 84 PLASTIC/EPOXY TFBGA BGA84,9X15,32 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES TIN SILVER COPPER BALL 800 µm BOTTOM 1.2 mm 12.5 mm 8 mm INTEGRATED SILICON SOLUTION INC TFBGA, BGA84,9X15,32 compliant EAR99 8542.32.00.28 Integrated Silicon Solution Inc.
IS43DR16320D-3DBLI-TR
Integrated Silicon Solution Inc
Check for Price Yes Yes Not Recommended 536.8709 Mbit 16 32MX16 1.8 V 450 ps 333 MHz 8192 FOUR BANK PAGE BURST DDR2 DRAM AUTO/SELF REFRESH COMMON 4,8 1 1 32000000 33.5544 M SYNCHRONOUS YES 4,8 25 mA 230 µA 1.9 V 1.7 V CMOS R-PBGA-B84 85 °C -40 °C NOT SPECIFIED NOT SPECIFIED 84 PLASTIC/EPOXY TFBGA BGA84,9X15,32 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES BALL 800 µm BOTTOM 1.2 mm 12.5 mm 8 mm INTEGRATED SILICON SOLUTION INC , compliant EAR99 8542.32.00.28