Parametric results for: ISC02 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED 1

9 hits Apply

40.0 mJ 1 64.0 mJ 1 136.0 mJ 1 218.0 mJ 1 370.0 mJ 2 1057.0 mJ 2 1535.0 mJ 1

Min (mJ) - Max (mJ)

9 hits Apply

DRAIN 9

9 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 9

9 hits Apply

DS Breakdown Voltage-Min (4)

30 V 3 40 V 1 80 V 2 100 V 3

Min (V) - Max (V)

9 hits Apply

Drain Current-Max (ID) (7)

91 A 1 110 A 1 128 A 1 150 A 1 192 A 2 198 A 2 230 A 1

Min (A) - Max (A)

9 hits Apply

Drain-source On Resistance-Max (7)

2.24 mΩ 1 2.3 mΩ 1 2.55 mΩ 2 2.7 mΩ 2 2.8 mΩ 1 3.4 mΩ 1 3.5 mΩ 1

Min (Ω) - Max (Ω)

9 hits Apply

METAL-OXIDE SEMICONDUCTOR 9

9 hits Apply

24 pF 2 28 pF 1 53 pF 2 88 pF 1 100 pF 1 120 pF 1 130 pF 1

Min (pF) - Max (pF)

9 hits Apply

R-PDSO-F8 8 R-PDSO-N8 1

9 hits Apply

e3 3

9 hits Apply

Manufacturer (1)

Infineon Technologies AG 9

9 hits Apply

1 6

9 hits Apply

Number of Elements (1)

1 9

9 hits Apply

Number of Terminals (1)

8 9

9 hits Apply

ENHANCEMENT MODE 9

9 hits Apply

150.0 °C 1 175.0 °C 8

Min (°C) - Max (°C)

9 hits Apply

-55.0 °C 9

9 hits Apply

PLASTIC/EPOXY 9

9 hits Apply

RECTANGULAR 9

9 hits Apply

SMALL OUTLINE 9

9 hits Apply

Active 7 Obsolete 2

9 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 9

9 hits Apply

48 W 1 75 W 1 83 W 1 94 W 1 217 W 4 254 W 1

Min (W) - Max (W)

9 hits Apply

Surface Mount (1)

YES 9

9 hits Apply