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SISC06DN-T1-GE3
Vishay Intertechnologies
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$0.8118 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 8 | 30 V | 1 | 40 A | 2.7 mΩ | 11.25 mJ | 60 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 46.3 W | 100 A | SWITCHING | SILICON | 62 ns | 52 ns | S-PDSO-F8 | 150 °C | -55 °C | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | SQUARE | SMALL OUTLINE | FLAT | DUAL | EAR99 | |||||||
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ISC060N10NM6ATMA1
Infineon Technologies AG
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$1.7977 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 8 | 100 V | 1 | 97 A | 6 mΩ | 291 mJ | 15 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 125 W | 388 A | SWITCHING | SILICON | R-PDSO-F8 | IEC-61249-2-21 | 1 | 175 °C | -55 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | FLAT | DUAL | EAR99 | |||||||||
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ISC0604NLS
Infineon Technologies AG
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Check for Price | Yes | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 8 | 80 V | 1 | 166 A | 2.8 mΩ | 340 mJ | 52 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 139 W | 664 A | SWITCHING | SILICON | R-PDSO-F8 | IEC-61249-2-21 | 1 | 150 °C | -55 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | FLAT | DUAL | EAR99 | TDSON-8 | ||||||||
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ISC060N10NM6
Infineon Technologies AG
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Check for Price | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 8 | 100 V | 1 | 97 A | 6 mΩ | 291 mJ | 15 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 125 W | 388 A | SWITCHING | SILICON | R-PDSO-F8 | e3 | IEC-61249-2-21 | 1 | 175 °C | -55 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | FLAT | DUAL | EAR99 |