Parametric results for: ISC07 under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

13.0 mJ 1 58.0 mJ 2

Min (mJ) - Max (mJ)

3 hits Apply

DRAIN 3

3 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 3

3 hits Apply

DS Breakdown Voltage-Min (1)

60 V 3

3 hits Apply

Drain Current-Max (ID) (2)

57 A 1 135 A 2

Min (A) - Max (A)

3 hits Apply

Drain-source On Resistance-Max (2)

2.8 mΩ 2 6.9 mΩ 1

Min (Ω) - Max (Ω)

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

3 hits Apply

24 pF 1 35 pF 2

Min (pF) - Max (pF)

3 hits Apply

R-PDSO-F8 3

3 hits Apply

e3 2

3 hits Apply

Manufacturer (1)

Infineon Technologies AG 3

3 hits Apply

1 1

3 hits Apply

Number of Elements (1)

1 3

3 hits Apply

Number of Terminals (1)

8 3

3 hits Apply

ENHANCEMENT MODE 3

3 hits Apply

175.0 °C 3

3 hits Apply

-55.0 °C 3

3 hits Apply

PLASTIC/EPOXY 3

3 hits Apply

RECTANGULAR 3

3 hits Apply

SMALL OUTLINE 3

3 hits Apply

Active 3

3 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

3 hits Apply

44 W 1 100 W 2

Min (W) - Max (W)

3 hits Apply

Surface Mount (1)

YES 3

3 hits Apply