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ISC080N10NM6ATMA1
Infineon Technologies AG
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$0.7086 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 8 | 100 V | 1 | 75 A | 8.05 mΩ | 185 mJ | 13 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 100 W | 300 A | SWITCHING | SILICON | R-PDSO-F8 | IEC-61249-2-21 | 1 | 175 °C | -55 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | FLAT | DUAL | EAR99 | ||||||
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ISC0804NLSATMA1
Infineon Technologies AG
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$1.0075 | Yes | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 8 | 100 V | 1 | 59 A | 10.9 mΩ | 50 mJ | 13 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 60 W | 236 A | SWITCHING | SILICON | R-PDSO-F8 | e3 | IEC-61249-2-21; IEC-68-1 | 1 | 150 °C | -55 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | FLAT | DUAL | EAR99 | TDSON-8 | |||
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ISC080N10NM6
Infineon Technologies AG
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Check for Price | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 8 | 100 V | 1 | 75 A | 8.05 mΩ | 185 mJ | 13 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 100 W | 300 A | SWITCHING | SILICON | R-PDSO-F8 | e3 | IEC-61249-2-21 | 175 °C | -55 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | FLAT | DUAL | EAR99 | |||||
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ISC0802NLSATMA1
Infineon Technologies AG
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Check for Price | Yes | Yes | Active | 1 | EAR99 |