Parametric results for: IXFH36N55Q under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Surface Mount

AVALANCHE RATED 2

4 hits Apply

2.0 mJ 2 2500.0 mJ 2

Min (mJ) - Max (mJ)

4 hits Apply

DRAIN 4

4 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 4

4 hits Apply

DS Breakdown Voltage-Min (1)

550 V 4

4 hits Apply

Drain Current-Max (ID) (1)

36 A 4

4 hits Apply

Drain-source On Resistance-Max (1)

160 mΩ 4

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

4 hits Apply

TO-247AD 4

4 hits Apply

R-PSFM-T3 4

4 hits Apply

e3 4

4 hits Apply

Manufacturer (2)

IXYS Corporation 2 Littelfuse Inc 2

4 hits Apply

Number of Elements (1)

1 4

4 hits Apply

Number of Terminals (1)

3 4

4 hits Apply

ENHANCEMENT MODE 4

4 hits Apply

150.0 °C 4

4 hits Apply

PLASTIC/EPOXY 4

4 hits Apply

RECTANGULAR 4

4 hits Apply

FLANGE MOUNT 4

4 hits Apply

Obsolete 2 Transferred 2

4 hits Apply

Yes 2

4 hits Apply

260 4

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

4 hits Apply

Surface Mount (1)

NO 4

4 hits Apply