Parametric results for: IXFP36N20X3 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED 3

4 hits Apply

300.0 mJ 3

4 hits Apply

DRAIN 2 ISOLATED 1

4 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 3

4 hits Apply

DS Breakdown Voltage-Min (1)

200 V 3

4 hits Apply

Drain Current-Max (ID) (1)

36 A 3

4 hits Apply

Drain-source On Resistance-Max (1)

45 mΩ 3

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

4 hits Apply

1.2 pF 2

4 hits Apply

TO-220AB 3

4 hits Apply

R-PSFM-T3 3

4 hits Apply

Manufacturer (2)

IXYS Corporation 2 Littelfuse Inc 2

4 hits Apply

Number of Elements (1)

1 3

4 hits Apply

Number of Terminals (1)

3 3

4 hits Apply

ENHANCEMENT MODE 3

4 hits Apply

150.0 °C 2

4 hits Apply

-55.0 °C 3

4 hits Apply

PLASTIC/EPOXY 3

4 hits Apply

RECTANGULAR 3

4 hits Apply

FLANGE MOUNT 3

4 hits Apply

Active 2 Transferred 2

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

4 hits Apply

36 W 1 170 W 1

Min (W) - Max (W)

4 hits Apply

Surface Mount (1)

NO 3

4 hits Apply