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JAN1N5311UR-1
Microchip Technology Inc
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$31.2270 | No | Active | 2.5 V | 3.6 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | YES | 100 V | 1 | FIELD EFFECT | METALLURGICALLY BONDED | Qualified | O-LELF-R2 | e0 | MIL-19500 | DO-213AB | 1 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS, LL41, MELF-2 | compliant | |||||||||||
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JAN1N5311UR-1
Microsemi Corporation
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$38.5440 | No | No | Transferred | 2.5 V | 3.6 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | YES | 1 | FIELD EFFECT | METALLURGICALLY BONDED | Not Qualified | O-LELF-R2 | e0 | MIL-19500 | DO-213AB | 1 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROSEMI CORP | HERMETIC SEALED, GLASS, LL41, MELF-2 | unknown | DO-213AB | 2 | EAR99 | 8541.10.00.70 | Microsemi Corporation | ||||||
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JAN1N5311UR-1
MACOM
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Check for Price | Yes | Transferred | 2.5 V | 3.6 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | YES | 1 | FIELD EFFECT | METALLURGICALLY BONDED | Qualified | O-XELF-R2 | DO-213AB | NOT SPECIFIED | NOT SPECIFIED | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | WRAP AROUND | END | M/A-COM TECHNOLOGY SOLUTIONS INC | compliant | EAR99 | 8541.10.00.70 | |||||||||||||||
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JAN1N5311UR-1
Cobham PLC
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Check for Price | Transferred | 2.5 V | 3.6 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | YES | 1 | FIELD EFFECT | METALLURGICALLY BONDED | Not Qualified | O-XELF-R2 | DO-213AB | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | WRAP AROUND | END | COBHAM PLC | unknown | EAR99 | 8541.10.00.70 | ||||||||||||||||||
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JAN1N5311UR-1/TR
Microsemi Corporation
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Check for Price | Transferred | CURRENT REGULATOR DIODE | MICROSEMI CORP | unknown | Microsemi Corporation | ||||||||||||||||||||||||||||||||||||||
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JAN1N5311UR-1
VPT Components
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Check for Price | Yes | Active | 2.5 V | 3.6 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | YES | 100 V | 1 | FIELD EFFECT | HIGH SOURCE IMPEDANCE | Qualified | O-LELF-R2 | MIL-19500 | DO-213AB | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | VPT COMPONENTS | MELF-2 | compliant | EAR99 | 8541.10.00.70 | ||||||||||||
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JAN1N5311UR-1
Defense Logistics Agency
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Check for Price | Active | 2.5 V | 3.6 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | YES | 100 V | 1 | FIELD EFFECT | Qualified | O-XELF-R2 | MIL-19500/463G | DO-213AB | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | WRAP AROUND | END | DEFENSE LOGISTICS AGENCY | HERMETIC SEALED PACKAGE-2 | unknown | ||||||||||||||||||
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JAN1N5311UR-1
Cobham Semiconductor Solutions
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Check for Price | Transferred | 2.5 V | 3.6 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | YES | 1 | FIELD EFFECT | METALLURGICALLY BONDED | Not Qualified | O-XELF-R2 | MIL-19500 | DO-213AB | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | AEROFLEX/METELICS INC | unknown | EAR99 | 8541.10.00.70 | |||||||||||||||
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JAN1N5311UR-1
Compensated Devices Inc
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Check for Price | Transferred | 2.5 V | 3.6 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | YES | 100 V | 1 | FIELD EFFECT | METALLURGICALLY BONDED | 20 kΩ | Not Qualified | O-XELF-R2 | MIL-19500/463G | DO-213AB | 175 °C | -65 °C | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | WRAP AROUND | END | COMPENSATED DEVICES INC | HERMETIC SEALED PACKAGE-2 | unknown |