Parametric results for: JAN1N5313 under Current Regulator Diodes
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JAN1N5313-1
Microchip Technology Inc
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$29.7666 | No | Active | 2.75 V | 4.3 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | NO | 100 V | 1 | FIELD EFFECT | 245 kΩ | Qualified | O-LALF-W2 | e0 | MIL-PRF-19500 | DO-7 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | DO-35, 2 PIN | compliant | |||||||||||
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JAN1N5313UR-1
Microchip Technology Inc
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$31.2270 | No | Active | 2.75 V | 4.3 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | YES | 100 V | 1 | FIELD EFFECT | METALLURGICALLY BONDED | Qualified | O-LELF-R2 | e0 | MIL-19500 | DO-213AB | 1 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS, LL41, MELF-2 | compliant | ||||||||||
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JAN1N5313-1
Microsemi Corporation
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$33.3300 | No | No | Transferred | 2.75 V | 4.3 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | NO | 1 | FIELD EFFECT | METALLURGICALLY BONDED | Not Qualified | O-XALF-W2 | e0 | MIL-19500/463 | DO-35 | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROSEMI CORP | DO-35, 2 PIN | unknown | EAR99 | 8541.10.00.70 | Microsemi Corporation | ||||||||||
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JAN1N5313UR-1
Microsemi Corporation
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$33.3300 | No | No | Transferred | 2.75 V | 4.3 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | YES | 1 | FIELD EFFECT | METALLURGICALLY BONDED | Not Qualified | O-LELF-R2 | e0 | MIL-19500 | DO-213AB | 1 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROSEMI CORP | HERMETIC SEALED, GLASS, LL41, MELF-2 | unknown | EAR99 | 8541.10.00.70 | DO-213AB | 2 | ||||||
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JAN1N5313UR-1
Cobham Semiconductor Solutions
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Check for Price | Transferred | 2.75 V | 4.3 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | YES | 1 | FIELD EFFECT | METALLURGICALLY BONDED | Not Qualified | O-XELF-R2 | e0 | MIL-19500 | DO-213AB | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | AEROFLEX/METELICS INC | unknown | EAR99 | 8541.10.00.70 | ||||||||||||
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JAN1N5313
CRYSTALONICS Inc
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Check for Price | Contact Manufacturer | 2.75 V | 4.3 mA | 600 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | NO | 100 V | 1 | FIELD EFFECT | Not Qualified | O-LALF-W2 | DO-7 | 200 °C | -55 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WIRE | AXIAL | CRYSTALONICS INC | O-LALF-W2 | unknown | EAR99 | 8541.10.00.70 | DO-7 | 2 | ||||||||||||
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JAN1N5313-1E3
Microsemi Corporation
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Check for Price | Active | MICROSEMI CORP-LAWRENCE | unknown | |||||||||||||||||||||||||||||||||||||||
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JAN1N5313UR-1/TR
Microsemi Corporation
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Check for Price | Transferred | CURRENT REGULATOR DIODE | MICROSEMI CORP | unknown | ||||||||||||||||||||||||||||||||||||||
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JAN1N5313-1
Compensated Devices Inc
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Check for Price | Transferred | 2.75 V | 4.3 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | NO | 100 V | 1 | FIELD EFFECT | METALLURGICALLY BONDED | 14 kΩ | Not Qualified | O-XALF-W2 | MIL-19500/463G | DO-7 | 175 °C | -65 °C | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | WIRE | AXIAL | COMPENSATED DEVICES INC | HERMETIC SEALED PACKAGE-2 | unknown | |||||||||||||
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JAN1N5313-1
Cobham PLC
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Check for Price | Transferred | 2.75 V | 4.3 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | NO | 1 | FIELD EFFECT | Not Qualified | O-LALF-W2 | MIL-19500/463 | DO-7 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WIRE | AXIAL | COBHAM PLC | GLASS PACKAGE-2 | unknown |