Parametric results for: JAN1N5419 under Rectifier Diodes
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JAN1N5419
Microchip Technology Inc
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$8.4162 | No | Active | 3 A | 250 ns | SILICON | RECTIFIER DIODE | SINGLE | NO | 1 | FAST RECOVERY POWER | 80 A | 1 | Qualified | O-XALF-W2 | MIL-19500/411L | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | compliant | ||||||||||||||||||||
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JAN1N5419US
Microchip Technology Inc
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$8.4882 | No | Active | 3 A | 250 ns | SILICON | RECTIFIER DIODE | SINGLE | YES | 1 | FAST RECOVERY POWER | 80 A | 1 | Qualified | O-LELF-R2 | MIL-19500/411L | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | compliant | ||||||||||||||||||||
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JAN1N5419
Microsemi Corporation
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$9.0002 | No | Transferred | 3 A | 250 ns | SILICON | RECTIFIER DIODE | SINGLE | NO | 1 | FAST RECOVERY POWER | 80 A | 1 | Not Qualified | O-XALF-W2 | MIL-19500/411L | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | WIRE | AXIAL | MICROSEMI CORP | unknown | DO-41 | SIMILAR TO DO-41, 2 PIN | 2 | EAR99 | 8541.10.00.80 | Microsemi Corporation | ||||||||||||||
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JAN1N5419US
Microsemi Corporation
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$13.2396 | No | Transferred | 3 A | 250 ns | SILICON | RECTIFIER DIODE | SINGLE | YES | 1 | FAST RECOVERY POWER | 80 A | 1 | Not Qualified | O-LELF-R2 | MIL-19500/411L | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | MICROSEMI CORP | unknown | GLASS PACKAGE-2 | 2 | EAR99 | 8541.10.00.80 | ||||||||||||||||
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JAN1N5419
Semtech Corporation
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$28.4247 | Transferred | 4.5 A | 1.1 V | 250 ns | 1 µA | SILICON | RECTIFIER DIODE | SINGLE | NO | 500 V | 1 | FAST SOFT RECOVERY | 150 A | 1 | Qualified | O-XALF-W2 | MIL-19500 | 175 °C | -65 °C | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | WIRE | AXIAL | SEMTECH CORP | unknown | HERMETIC SEALED, G4, 2 PIN | 2 | EAR99 | 8541.10.00.80 | SEMTECH | |||||||||||
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JAN1N5419US
Sensitron Semiconductors
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Check for Price | No | No | Active | 3 A | 1.5 V | 250 ns | SILICON | RECTIFIER DIODE | SINGLE | YES | 500 V | 1 | METALLURGICALLY BONDED | GENERAL PURPOSE | 80 A | 1 | Qualified | E-LELF-R2 | MIL-19500 | 175 °C | NOT SPECIFIED | NOT SPECIFIED | ISOLATED | 2 | GLASS | ELLIPTICAL | LONG FORM | WRAP AROUND | END | SENSITRON SEMICONDUCTOR | compliant | MELF | HERMETIC SEALED, D-5, MELF-2 | 2 | EAR99 | 8541.10.00.80 | ||||||||
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JAN1N5419
Defense Logistics Agency
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Check for Price | Active | 3 A | 250 ns | SILICON | RECTIFIER DIODE | SINGLE | NO | 1 | FAST RECOVERY POWER | 80 A | 1 | Qualified | O-XALF-W2 | MIL-19500/411L | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | WIRE | AXIAL | DEFENSE LOGISTICS AGENCY | unknown | SIMILAR TO DO-41, 2 PIN | ||||||||||||||||||||
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JAN1N5419
Voltage Multipliers Inc
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Check for Price | No | Obsolete | 5 A | 1.1 V | 250 ns | SILICON | RECTIFIER DIODE | SINGLE | NO | 500 V | 1 | GENERAL PURPOSE | 80 A | 1 | Not Qualified | E-LALF-W2 | e0 | MIL-19500/411 | 175 °C | ISOLATED | 2 | GLASS | ELLIPTICAL | LONG FORM | TIN LEAD | WIRE | AXIAL | VOLTAGE MULTIPLIERS INC | not_compliant | EAR99 | 8541.10.00.80 | |||||||||||||
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JAN1N5419US
Defense Logistics Agency
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Check for Price | Active | 3 A | 250 ns | SILICON | RECTIFIER DIODE | SINGLE | YES | 1 | FAST RECOVERY POWER | 80 A | 1 | Qualified | O-LELF-R2 | MIL-19500/411L | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | DEFENSE LOGISTICS AGENCY | unknown | GLASS PACKAGE-2 | ||||||||||||||||||||
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JAN1N5419
Sensitron Semiconductors
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Check for Price | No | No | Active | 3 A | 1.1 V | 250 ns | SILICON | RECTIFIER DIODE | SINGLE | NO | 500 V | 1 | METALLURGICALLY BONDED | GENERAL PURPOSE | 80 A | 1 | Qualified | E-XALF-W2 | e0 | MIL-19500 | DO-35 | 175 °C | ISOLATED | 2 | UNSPECIFIED | ELLIPTICAL | LONG FORM | TIN LEAD | WIRE | AXIAL | SENSITRON SEMICONDUCTOR | compliant | DO-35 | HERMETIC SEALED, 301, 2PIN | 2 | EAR99 | 8541.10.00.80 |