Findchips: Parametric Search Results for JAN1N5806

Parametric results for: JAN1N5806 under Rectifier Diodes

Select parts from the table below to compare.

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Select Parts		Part Number

		JAN1N5806 Microchip Technology Inc
		JAN1N5806US Microchip Technology Inc
		JAN1N5806US/TR Microchip Technology Inc
		JAN1N5806 Microsemi Corporation
		JAN1N5806 Semtech Corporation
		JAN1N5806US Microsemi Corporation
		JAN1N5806US Semtech Corporation
		JAN1N5806URS Microchip Technology Inc
		JAN1N5806URS Microsemi Corporation
		JAN1N5806US Sensitron Semiconductors

				Most Relevant												Technical				Compliance				Operating Conditions		Physical								Other
Composite Price	Pbfree Code	Rohs Code	Part Life Cycle Code	Output Current-Max	Forward Voltage-Max (VF)	Reverse Recovery Time-Max	Reverse Current-Max	Power Dissipation-Max	Diode Element Material	Diode Type	Configuration	Surface Mount	Rep Pk Reverse Voltage-Max	Number of Elements	Technology	Additional Feature	Application	Non-rep Pk Forward Current-Max	Number of Phases	Qualification Status	JESD-30 Code	JESD-609 Code	Reference Standard	Operating Temperature-Max	Operating Temperature-Min	Case Connection	Number of Terminals	Package Body Material	Package Shape	Package Style	Terminal Finish	Terminal Form	Terminal Position	Ihs Manufacturer	Reach Compliance Code	Samacsys Manufacturer	ECCN Code	HTS Code	Package Description	Pin Count	Manufacturer Package Code	Part Package Code	Date Of Intro

$4.9560

Active

1 A

25 ns

3 W

SILICON

RECTIFIER DIODE

SINGLE

150 V

AVALANCHE

HIGH RELIABILITY

Qualified

O-LALF-W2

MIL-19500

175 °C

-65 °C

ISOLATED

GLASS

ROUND

LONG FORM

TIN LEAD OVER NICKEL

WIRE

AXIAL

MICROCHIP TECHNOLOGY INC

compliant

$6.6802

Active

2.5 A

25 ns

SILICON

RECTIFIER DIODE

SINGLE

YES

150 V

ULTRA FAST RECOVERY POWER

35 A

Qualified

O-LELF-R2

MIL-19500/477F

ISOLATED

GLASS

ROUND

LONG FORM

Tin/Lead (Sn/Pb) - with Nickel (Ni) barrier

WRAP AROUND

END

MICROCHIP TECHNOLOGY INC

compliant

Microchip

$6.8390

Active

2.5 A

25 ns

SILICON

RECTIFIER DIODE

SINGLE

YES

150 V

ULTRA FAST RECOVERY POWER

35 A

Qualified

O-LELF-R2

MIL-19500/477F

ISOLATED

GLASS

ROUND

LONG FORM

Tin/Lead (Sn/Pb) - with Nickel (Ni) barrier

WRAP AROUND

END

MICROCHIP TECHNOLOGY INC

unknown

EAR99

8541.10.00.80

$8.2682

Transferred

1 A

25 ns

3 W

SILICON

RECTIFIER DIODE

SINGLE

150 V

AVALANCHE

HIGH RELIABILITY

Not Qualified

O-LALF-W2

MIL-19500

175 °C

-65 °C

ISOLATED

GLASS

ROUND

LONG FORM

TIN LEAD OVER NICKEL

WIRE

AXIAL

MICROSEMI CORP

not_compliant

Microsemi Corporation

EAR99

8541.10.00.80

HERMETIC SEALED, GLASS, A PACKAGE-2

$9.7826

Transferred

3.3 A

875 mV

25 ns

1 µA

SILICON

RECTIFIER DIODE

SINGLE

150 V

SUPER FAST RECOVERY

35 A

Qualified

O-LALF-W2

MIL-19500/477

175 °C

-65 °C

ISOLATED

GLASS

ROUND

LONG FORM

WIRE

AXIAL

SEMTECH CORP

unknown

SEMTECH

EAR99

8541.10.00.80

G111, 2 PIN

G111

$11.6688

Transferred

2.5 A

25 ns

SILICON

RECTIFIER DIODE

SINGLE

YES

150 V

ULTRA FAST RECOVERY POWER

35 A

Not Qualified

O-LELF-R2

MIL-19500/477F

ISOLATED

GLASS

ROUND

LONG FORM

Tin/Lead (Sn/Pb) - with Nickel (Ni) barrier

WRAP AROUND

END

MICROSEMI CORP

not_compliant

Microsemi Corporation

EAR99

8541.10.00.80

$14.1125

Transferred

2.5 A

875 mV

25 ns

SILICON

RECTIFIER DIODE

SINGLE

YES

150 V

ULTRA FAST RECOVERY POWER

35 A

Qualified

O-LELF-R2

MIL-19500/477F

175 °C

ISOLATED

GLASS

ROUND

LONG FORM

WRAP AROUND

END

SEMTECH CORP

unknown

SEMTECH

EAR99

8541.10.00.80

$19.4281

Active

1 A

25 ns

SILICON

RECTIFIER DIODE

SINGLE

YES

150 V

HIGH RELIABILITY

Qualified

O-LELF-R2

MIL-19500

175 °C

-65 °C

ISOLATED

GLASS

ROUND

LONG FORM

Tin/Lead (Sn/Pb) - with Nickel (Ni) barrier

WRAP AROUND

END

MICROCHIP TECHNOLOGY INC

compliant

HERMETIC SEALED, GLASS, MELF-2

$21.6902

Transferred

1 A

25 ns

SILICON

RECTIFIER DIODE

SINGLE

YES

150 V

HIGH RELIABILITY

Not Qualified

O-LELF-R2

MIL-19500

175 °C

-65 °C

ISOLATED

GLASS

ROUND

LONG FORM

Tin/Lead (Sn/Pb) - with Nickel (Ni) barrier

WRAP AROUND

END

MICROSEMI CORP

compliant

Microsemi Corporation

EAR99

8541.10.00.80

HERMETIC SEALED, GLASS, MELF-2

MELF

Check for Price

Active

2.5 A

875 mV

25 ns

SILICON

RECTIFIER DIODE

SINGLE

YES

150 V

HIGH RELIABILITY

ULTRA FAST RECOVERY

35 A

Qualified

O-LELF-R2

MIL-19500

175 °C

ISOLATED

GLASS

ROUND

LONG FORM

TIN LEAD

WRAP AROUND

END

SENSITRON SEMICONDUCTOR

compliant

EAR99

8541.10.00.80

MELF-2

MELF

1999-06-01

1 2 3 Next

Compare

JAN1N5806

Microchip Technology Inc

$4.9560

Active

1 A

25 ns

3 W

SILICON

RECTIFIER DIODE

SINGLE

150 V

AVALANCHE

HIGH RELIABILITY

Qualified

O-LALF-W2

MIL-19500

175 °C

-65 °C

ISOLATED

GLASS

ROUND

LONG FORM

TIN LEAD OVER NICKEL

WIRE

AXIAL

MICROCHIP TECHNOLOGY INC

compliant

JAN1N5806US

Microchip Technology Inc

$6.6802

Active

2.5 A

25 ns

SILICON

RECTIFIER DIODE

SINGLE

YES

150 V

ULTRA FAST RECOVERY POWER

35 A

Qualified

O-LELF-R2

MIL-19500/477F

ISOLATED

GLASS

ROUND

LONG FORM

Tin/Lead (Sn/Pb) - with Nickel (Ni) barrier

WRAP AROUND

END

MICROCHIP TECHNOLOGY INC

compliant

Microchip

JAN1N5806US/TR

Microchip Technology Inc

$6.8390

Active

2.5 A

25 ns

SILICON

RECTIFIER DIODE

SINGLE

YES

150 V

ULTRA FAST RECOVERY POWER

35 A

Qualified

O-LELF-R2

MIL-19500/477F

ISOLATED

GLASS

ROUND

LONG FORM

Tin/Lead (Sn/Pb) - with Nickel (Ni) barrier

WRAP AROUND

END

MICROCHIP TECHNOLOGY INC

unknown

EAR99

8541.10.00.80

JAN1N5806

Microsemi Corporation

$8.2682

Transferred

1 A

25 ns

3 W

SILICON

RECTIFIER DIODE

SINGLE

150 V

AVALANCHE

HIGH RELIABILITY

Not Qualified

O-LALF-W2

MIL-19500

175 °C

-65 °C

ISOLATED

GLASS

ROUND

LONG FORM

TIN LEAD OVER NICKEL

WIRE

AXIAL

MICROSEMI CORP

not_compliant

Microsemi Corporation

EAR99

8541.10.00.80

HERMETIC SEALED, GLASS, A PACKAGE-2

JAN1N5806

Semtech Corporation

$9.7826

Transferred

3.3 A

875 mV

25 ns

1 µA

SILICON

RECTIFIER DIODE

SINGLE

150 V

SUPER FAST RECOVERY

35 A

Qualified

O-LALF-W2

MIL-19500/477

175 °C

-65 °C

ISOLATED

GLASS

ROUND

LONG FORM

WIRE

AXIAL

SEMTECH CORP

unknown

SEMTECH

EAR99

8541.10.00.80

G111, 2 PIN

G111

JAN1N5806US

Microsemi Corporation

$11.6688

Transferred

2.5 A

25 ns

SILICON

RECTIFIER DIODE

SINGLE

YES

150 V

ULTRA FAST RECOVERY POWER

35 A

Not Qualified

O-LELF-R2

MIL-19500/477F

ISOLATED

GLASS

ROUND

LONG FORM

Tin/Lead (Sn/Pb) - with Nickel (Ni) barrier

WRAP AROUND

END

MICROSEMI CORP

not_compliant

Microsemi Corporation

EAR99

8541.10.00.80

JAN1N5806US

Semtech Corporation

$14.1125

Transferred

2.5 A

875 mV

25 ns

SILICON

RECTIFIER DIODE

SINGLE

YES

150 V

ULTRA FAST RECOVERY POWER

35 A

Qualified

O-LELF-R2

MIL-19500/477F

175 °C

ISOLATED

GLASS

ROUND

LONG FORM

WRAP AROUND

END

SEMTECH CORP

unknown

SEMTECH

EAR99

8541.10.00.80

JAN1N5806URS

Microchip Technology Inc

$19.4281

Active

1 A

25 ns

SILICON

RECTIFIER DIODE

SINGLE

YES

150 V

HIGH RELIABILITY

Qualified

O-LELF-R2

MIL-19500

175 °C

-65 °C

ISOLATED

GLASS

ROUND

LONG FORM

Tin/Lead (Sn/Pb) - with Nickel (Ni) barrier

WRAP AROUND

END

MICROCHIP TECHNOLOGY INC

compliant

HERMETIC SEALED, GLASS, MELF-2

JAN1N5806URS

Microsemi Corporation

$21.6902

Transferred

1 A

25 ns

SILICON

RECTIFIER DIODE

SINGLE

YES

150 V

HIGH RELIABILITY

Not Qualified

O-LELF-R2

MIL-19500

175 °C

-65 °C

ISOLATED

GLASS

ROUND

LONG FORM

Tin/Lead (Sn/Pb) - with Nickel (Ni) barrier

WRAP AROUND

END

MICROSEMI CORP

compliant

Microsemi Corporation

EAR99

8541.10.00.80

HERMETIC SEALED, GLASS, MELF-2

MELF

JAN1N5806US

Sensitron Semiconductors

Check for Price

Active

2.5 A

875 mV

25 ns

SILICON

RECTIFIER DIODE

SINGLE

YES

150 V

HIGH RELIABILITY

ULTRA FAST RECOVERY

35 A

Qualified

O-LELF-R2

MIL-19500

175 °C

ISOLATED

GLASS

ROUND

LONG FORM

TIN LEAD

WRAP AROUND

END

SENSITRON SEMICONDUCTOR

compliant

EAR99

8541.10.00.80

MELF-2

MELF

1999-06-01

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