Parametric results for: JAN1N5806US under Rectifier Diodes
Filter Your Search
1 - 10 of 10 results
|
Select parts from the table below to compare.
Compare
Compare
|
|
JAN1N5806US
Microchip Technology Inc
|
$6.6802 | No | Active | 2.5 A | 25 ns | SILICON | RECTIFIER DIODE | SINGLE | YES | 150 V | 1 | ULTRA FAST RECOVERY POWER | 35 A | 1 | Qualified | O-LELF-R2 | e0 | MIL-19500/477F | ISOLATED | 2 | GLASS | ROUND | LONG FORM | Tin/Lead (Sn/Pb) - with Nickel (Ni) barrier | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | compliant | Microchip | |||||||||||||||
|
|
JAN1N5806US/TR
Microchip Technology Inc
|
$6.8390 | Active | 2.5 A | 25 ns | SILICON | RECTIFIER DIODE | SINGLE | YES | 150 V | 1 | ULTRA FAST RECOVERY POWER | 35 A | 1 | Qualified | O-LELF-R2 | e0 | MIL-19500/477F | NOT SPECIFIED | NOT SPECIFIED | ISOLATED | 2 | GLASS | ROUND | LONG FORM | Tin/Lead (Sn/Pb) - with Nickel (Ni) barrier | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | unknown | EAR99 | 8541.10.00.80 | |||||||||||||
|
|
JAN1N5806US
Microsemi Corporation
|
$11.6688 | No | Transferred | 2.5 A | 25 ns | SILICON | RECTIFIER DIODE | SINGLE | YES | 150 V | 1 | ULTRA FAST RECOVERY POWER | 35 A | 1 | Not Qualified | O-LELF-R2 | e0 | MIL-19500/477F | ISOLATED | 2 | GLASS | ROUND | LONG FORM | Tin/Lead (Sn/Pb) - with Nickel (Ni) barrier | WRAP AROUND | END | MICROSEMI CORP | not_compliant | Microsemi Corporation | EAR99 | 8541.10.00.80 | |||||||||||||
|
|
JAN1N5806US
Semtech Corporation
|
$14.1125 | Transferred | 2.5 A | 875 mV | 25 ns | SILICON | RECTIFIER DIODE | SINGLE | YES | 150 V | 1 | ULTRA FAST RECOVERY POWER | 35 A | 1 | Qualified | O-LELF-R2 | MIL-19500/477F | 175 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | SEMTECH CORP | unknown | SEMTECH | EAR99 | 8541.10.00.80 | ||||||||||||||
|
JAN1N5806US
Sensitron Semiconductors
|
Check for Price | No | No | Active | 2.5 A | 875 mV | 25 ns | SILICON | RECTIFIER DIODE | SINGLE | YES | 150 V | 1 | HIGH RELIABILITY | ULTRA FAST RECOVERY | 35 A | 1 | Qualified | O-LELF-R2 | e0 | MIL-19500 | 175 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | SENSITRON SEMICONDUCTOR | compliant | EAR99 | 8541.10.00.80 | MELF | MELF-2 | 2 | 1999-06-01 | ||||||
|
|
JAN1N5806US
Defense Logistics Agency
|
Check for Price | Active | 2.5 A | 25 ns | SILICON | RECTIFIER DIODE | SINGLE | YES | 1 | ULTRA FAST RECOVERY POWER | 35 A | 1 | Qualified | O-LELF-R2 | MIL-19500/477F | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | DEFENSE LOGISTICS AGENCY | unknown | ||||||||||||||||||||
|
|
JAN1N5806US
VPT Components
|
Check for Price | No | Active | 1 A | 25 ns | SILICON | RECTIFIER DIODE | SINGLE | YES | 150 V | 1 | 1 | Qualified | O-LELF-R2 | MIL-19500 | NOT SPECIFIED | NOT SPECIFIED | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | VPT COMPONENTS | compliant | ||||||||||||||||||
|
|
JAN1N5806US
Bkc Semiconductors Inc
|
Check for Price | No | Obsolete | 2.5 A | 875 mV | 25 ns | 3 W | SILICON | RECTIFIER DIODE | SINGLE | YES | 150 V | 1 | FAST RECOVERY | 35 A | 1 | Not Qualified | O-MELF-R2 | e0 | MIL-19500/477 | 175 °C | ISOLATED | 2 | METAL | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | BKC SEMICONDUCTORS INC | unknown | EAR99 | 8541.10.00.80 | |||||||||||
|
|
JAN1N5806US
MACOM
|
Check for Price | Transferred | 1 A | 25 ns | SILICON | RECTIFIER DIODE | SINGLE | YES | 150 V | 1 | Qualified | O-LELF-R2 | MIL-19500 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | M/A-COM TECHNOLOGY SOLUTIONS INC | compliant | EAR99 | 8541.10.00.80 | ||||||||||||||||||||
|
|
JAN1N5806US
Micross Components
|
Check for Price | Active | 2.5 A | 875 mV | 25 ns | SILICON | RECTIFIER DIODE | SINGLE | YES | 150 V | 1 | ULTRA FAST RECOVERY POWER | 35 A | 1 | Qualified | O-LELF-R2 | MIL-19500/477F | 175 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | MICROSS COMPONENTS | unknown |