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1N5618
Sensitron Semiconductors
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$3.6790 | No | No | Active | 1 A | 1.2 V | 2 µs | SILICON | RECTIFIER DIODE | SINGLE | NO | 600 V | 1 | HIGH RELIABILITY, METALLURGICALLY BONDED | 50 A | 1 | Not Qualified | E-LALF-W2 | e0 | 1 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ELLIPTICAL | LONG FORM | TIN LEAD | WIRE | AXIAL | SENSITRON SEMICONDUCTOR | HERMETIC SEALED, GLASS, 102, 2 PIN | 2 | compliant | EAR99 | 8541.10.00.80 | |||||||||
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1N5618
Microchip Technology Inc
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$4.2821 | No | Active | 1 A | 2 µs | SILICON | RECTIFIER DIODE | SINGLE | NO | 600 V | 1 | AVALANCHE | HIGH RELIABILITY, METALLURGICALLY BONDED | 1 | Not Qualified | O-LALF-W2 | e0 | 200 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS, A PACKAGE-2 | compliant | |||||||||||||||
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1N5618/TR
Microchip Technology Inc
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$4.4371 | No | Active | 1 A | 2 µs | 500 nA | SILICON | 660 V | RECTIFIER DIODE | SINGLE | NO | 600 V | 1 | HIGH RELIABILITY | GENERAL PURPOSE | 30 A | 1 | 600 V | Not Qualified | O-LALF-W2 | e0 | 200 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | compliant | ||||||||||||
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JAN1N5618
Microchip Technology Inc
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$4.6485 | No | Active | 1 A | 1.2 V | 2 µs | SILICON | RECTIFIER DIODE | SINGLE | NO | 600 V | 1 | AVALANCHE | HIGH RELIABILITY | GENERAL PURPOSE | 50 A | 1 | Qualified | O-LALF-W2 | e0 | MIL-19500 | 200 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS, A PACKAGE-2 | compliant | |||||||||||
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1N5618
Semtech Corporation
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$5.0075 | No | No | Transferred | 1 A | 1.2 V | 2 µs | SILICON | RECTIFIER DIODE | SINGLE | NO | 600 V | 1 | METALLURGICALLY BONDED | 50 A | 1 | Not Qualified | E-XALF-W2 | e0 | 175 °C | -65 °C | ISOLATED | 2 | UNSPECIFIED | ELLIPTICAL | LONG FORM | TIN LEAD | WIRE | AXIAL | SEMTECH CORP | HERMETIC SEALED PACKAGE-2 | 2 | unknown | EAR99 | 8541.10.00.80 | ||||||||||
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1N5618US
Sensitron Semiconductors
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$5.1291 | No | No | Active | 1 A | 1.3 V | 2 µs | SILICON | RECTIFIER DIODE | SINGLE | YES | 600 V | 1 | HIGH RELIABILITY, METALLURGICALLY BONDED | GENERAL PURPOSE | 1 | Not Qualified | E-LELF-R2 | e0 | 1 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ELLIPTICAL | LONG FORM | TIN LEAD | WRAP AROUND | END | SENSITRON SEMICONDUCTOR | HERMETIC SEALED, GLASS, MELF-A, 2 PIN | 2 | compliant | EAR99 | 8541.10.00.80 | MELF | ||||||||
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JANTX1N5618
Microchip Technology Inc
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$5.1470 | No | Active | 1 A | 2 µs | SILICON | RECTIFIER DIODE | SINGLE | NO | 600 V | 1 | AVALANCHE | HIGH RELIABILITY | GENERAL PURPOSE | 1 | Qualified | O-LALF-W2 | e0 | MIL-19500 | 200 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS, A PACKAGE-2 | compliant | |||||||||||||
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JANTX1N5618/TR
Microchip Technology Inc
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$5.3041 | No | Active | 1 A | 2 µs | 500 nA | SILICON | 660 V | RECTIFIER DIODE | SINGLE | NO | 600 V | 1 | HIGH RELIABILITY | GENERAL PURPOSE | 30 A | 1 | 600 V | O-LALF-W2 | MIL-PRF-19500 | 200 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | compliant | ||||||||||||||
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JANTX1N5618
Semtech Corporation
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$5.5883 | Transferred | 1 A | 1.2 V | 2 µs | SILICON | RECTIFIER DIODE | SINGLE | NO | 600 V | 1 | METALLURGICALLY BONDED | GENERAL PURPOSE | 50 A | 1 | Qualified | E-XALF-W2 | MIL-19500 | 175 °C | -65 °C | ISOLATED | 2 | UNSPECIFIED | ELLIPTICAL | LONG FORM | WIRE | AXIAL | SEMTECH CORP | HERMETIC SEALED PACKAGE-2 | 2 | unknown | EAR99 | 8541.10.00.80 | ||||||||||||
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1N5618C.TR
Semtech Corporation
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$5.9341 | Transferred | 1 A | 1.2 V | 3 ns | 500 nA | SILICON | RECTIFIER DIODE | SINGLE | NO | 600 V | 1 | AVALANCHE | HIGH RELIABILITY | FAST RECOVERY | 50 A | 1 | 600 V | E-XALF-W2 | 175 °C | -65 °C | ISOLATED | 2 | UNSPECIFIED | ELLIPTICAL | LONG FORM | WIRE | AXIAL | SEMTECH CORP | unknown | EAR99 | 8541.10.00.80 |