Parametric results for: JANTX1N5303 under Current Regulator Diodes
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JANTX1N5303-1
Microchip Technology Inc
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$35.0186 | No | Active | 1.65 V | 1.6 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | NO | 100 V | 1 | FIELD EFFECT | 475 kΩ | Qualified | O-LALF-W2 | e0 | MIL-PRF-19500 | DO-7 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | DO-35, 2 PIN | compliant | |||||||||||||
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JANTX1N5303UR-1
Microchip Technology Inc
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$39.4207 | No | Active | 1.65 V | 1.6 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | YES | 100 V | 1 | FIELD EFFECT | METALLURGICALLY BONDED | Qualified | O-LELF-R2 | e0 | MIL-19500 | DO-213AB | 1 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS, LL41, MELF-2 | compliant | ||||||||||||
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JANTX1N5303UR-1
Microsemi Corporation
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$40.4745 | No | No | Transferred | 1.65 V | 1.6 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | YES | 1 | FIELD EFFECT | METALLURGICALLY BONDED | Not Qualified | O-LELF-R2 | e0 | MIL-19500 | DO-213AB | 1 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROSEMI CORP | HERMETIC SEALED, GLASS, LL41, MELF-2 | unknown | DO-213AB | 2 | EAR99 | 8541.10.00.70 | Microsemi Corporation | |||||||
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JANTX1N5303-1
Microsemi Corporation
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Check for Price | No | No | Transferred | 1.65 V | 1.6 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | NO | 1 | FIELD EFFECT | METALLURGICALLY BONDED | Not Qualified | O-XALF-W2 | e0 | MIL-19500/463 | DO-35 | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROSEMI CORP | DO-35, 2 PIN | unknown | DO-7 | 2 | EAR99 | 8541.10.00.70 | |||||||||||
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JANTX1N5303
Motorola Mobility LLC
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Check for Price | Obsolete | 1.65 V | 1.6 mA | 600 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | NO | 100 V | 1 | FIELD EFFECT | 92 kΩ | Not Qualified | O-LALF-W2 | DO-204AA | 200 °C | -55 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WIRE | AXIAL | MOTOROLA INC | O-LALF-W2 | unknown | EAR99 | 8541.10.00.70 | |||||||||||||||
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JANTX1N5303-1E3
Microsemi Corporation
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Check for Price | Active | MICROSEMI CORP-LAWRENCE | unknown | |||||||||||||||||||||||||||||||||||||||||
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JANTX1N5303-1
MACOM
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Check for Price | Yes | Transferred | 1.65 V | 1.6 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | NO | 1 | FIELD EFFECT | HIGH SOURCE IMPEDANCE | Qualified | O-LALF-W2 | MIL-19500 | DO-7 | 175 °C | -65 °C | NOT SPECIFIED | NOT SPECIFIED | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WIRE | AXIAL | M/A-COM TECHNOLOGY SOLUTIONS INC | compliant | EAR99 | 8541.10.00.70 | |||||||||||||
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JANTX1N5303-1
VPT Components
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Check for Price | Yes | Active | 1.65 V | 1.6 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | NO | 100 V | 1 | FIELD EFFECT | HIGH SOURCE IMPEDANCE | Qualified | O-LALF-W2 | MIL-19500 | DO-7 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WIRE | AXIAL | VPT COMPONENTS | compliant | EAR99 | 8541.10.00.70 | ||||||||||||||
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JANTX1N5303
Cobham PLC
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Check for Price | No | Obsolete | 1.65 V | 1.6 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | NO | 100 V | 1 | FIELD EFFECT | 475 kΩ | 92 kΩ | Not Qualified | O-LALF-W2 | e0 | MIL-19500/463 | DO-7 | 200 °C | -55 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | KNOX SEMICONDUCTORS INC | O-LALF-W2 | unknown | DO-7 | 2 | EAR99 | 8541.10.00.70 | ||||||||
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JANTX1N5303
Microsemi Corporation
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Check for Price | No | Obsolete | 1.65 V | 1.6 mA | 600 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | NO | 100 V | 1 | FIELD EFFECT | 475 kΩ | Not Qualified | O-LALF-W2 | e0 | DO-204AA | ISOLATED | 2 | GLASS | ROUND | LONG FORM | Tin/Lead (Sn/Pb) | WIRE | AXIAL | MICROSEMI CORP | O-LALF-W2 | not_compliant | DO-7 | 2 | EAR99 | 8541.10.00.70 |