Parametric results for: JANTX1N945B-1 under Zener Diodes
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JANTX1N945B-1/TR
Microchip Technology Inc
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Check for Price | Active | 500 mW | 11.7 V | SILICON | ZENER DIODE | SINGLE | NO | 1 | ZENER | METALLURGICALLY BONDED | 0.0585 mV/°C | 4.96 % | Qualified | O-LALF-W2 | e0 | DO-35 | 175 °C | -55 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | unknown | EAR99 | 8541.10.00.50 | |||||||||||
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JANTX1N945B-1
Microsemi Corporation
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Check for Price | No | No | Transferred | 500 mW | 11.7 V | SILICON | ZENER DIODE | SINGLE | NO | 1 | ZENER | METALLURGICALLY BONDED | 0.0585 mV/°C | 4.96 % | Not Qualified | O-LALF-W2 | e0 | DO-35 | 175 °C | -55 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROSEMI CORP | not_compliant | EAR99 | 8541.10.00.50 | DO-7 | 2 | Microsemi Corporation | ||||||
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JANTX1N945B-1
Compensated Devices Inc
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Check for Price | Transferred | 500 mW | 11.7 V | SILICON | ZENER DIODE | SINGLE | NO | 1 | ZENER | METALLURGICALLY BONDED | 0.0585 mV/°C | 4.96 % | Not Qualified | O-LALF-W2 | MIL-19500/157 | DO-35 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WIRE | AXIAL | COMPENSATED DEVICES INC | unknown | ||||||||||||||
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JANTX1N945B-1
Microchip Technology Inc
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Check for Price | No | Active | 500 mW | 11.7 V | SILICON | ZENER DIODE | SINGLE | NO | 1 | ZENER | METALLURGICALLY BONDED | 0.0585 mV/°C | 4.96 % | Qualified | O-LALF-W2 | e0 | DO-35 | 175 °C | -55 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | compliant | Microchip | |||||||||||
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JANTX1N945B-1
Defense Logistics Agency
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Check for Price | Active | 500 mW | 11.7 V | SILICON | ZENER DIODE | SINGLE | NO | 1 | ZENER | METALLURGICALLY BONDED | 0.0585 mV/°C | 5 % | Qualified | O-LALF-W2 | e0 | MIL-19500/157 | DO-204AA | NOT SPECIFIED | NOT SPECIFIED | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | DEFENSE LOGISTICS AGENCY | unknown | HERMETIC SEALED, GLASS, DO-7 |