Parametric results for: JANTXV 1N4150 under Rectifier Diodes
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1N4150TAP
Vishay Intertechnologies
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$0.0134 | Yes | Active | 150 mA | 1 V | 4 ns | 100 µA | 500 mW | SILICON | RECTIFIER DIODE | SINGLE | NO | 50 V | 1 | FAST RECOVERY | 4 A | 1 | 50 V | Not Qualified | O-XALF-W2 | e2 | DO-204AH | 1 | 175 °C | 260 | 30 | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | Tin/Silver (Sn96.5Ag3.5) | WIRE | AXIAL | VISHAY INTERTECHNOLOGY INC | DO-35, 2 PIN | compliant | EAR99 | 8541.10.00.70 | Vishay | ||||||||
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1N4150
Diotec Semiconductor AG
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$0.0145 | Yes | Active | 300 mA | 620 mV | 4 ns | 500 mW | SILICON | RECTIFIER DIODE | SINGLE | NO | 50 V | 1 | 4 A | 1 | Not Qualified | O-LALF-W2 | e3 | DO-35 | 1 | 200 °C | -50 °C | 260 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN | WIRE | AXIAL | DIOTEC SEMICONDUCTOR AG | compliant | EAR99 | 8541.10.00.70 | Diotec | DO-35 | 2 | ||||||||||
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1N4150TR
Vishay Intertechnologies
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$0.0296 | Yes | Active | 150 mA | 1 V | 4 ns | 100 µA | 500 mW | SILICON | RECTIFIER DIODE | SINGLE | NO | 50 V | 1 | FAST RECOVERY | 4 A | 1 | 50 V | Not Qualified | O-XALF-W2 | e2 | DO-204AH | 1 | 175 °C | 260 | 30 | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | Tin/Silver (Sn96.5Ag3.5) | WIRE | AXIAL | VISHAY INTERTECHNOLOGY INC | DO-35, 2 PIN | compliant | EAR99 | 8541.10.00.70 | Vishay | ||||||||
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1N4150W-E3-08
Vishay Intertechnologies
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$0.0849 | Yes | Yes | Active | 200 mA | 4 ns | 410 mW | SILICON | RECTIFIER DIODE | SINGLE | YES | 50 V | 1 | 1 | R-PDSO-G2 | e3 | 1 | 150 °C | -55 °C | UNSPECIFIED | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | VISHAY INTERTECHNOLOGY INC | ROHS COMPLIANT PACKAGE-2 | compliant | EAR99 | 8541.10.00.70 | Vishay | 2 | ||||||||||||||
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JAN1N4150-1
Microchip Technology Inc
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$0.8900 | No | Active | 200 mA | 4 ns | SILICON | RECTIFIER DIODE | SINGLE | NO | 1 | 1 | Qualified | O-XALF-W2 | e0 | MIL-19500/231H | 175 °C | -65 °C | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | SIMILAR TO DO-7, 2 PIN | compliant | EAR99 | 8541.10.00.70 | ||||||||||||||||||
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1N4150-1
Microchip Technology Inc
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$1.0250 | No | Active | 200 mA | 4 ns | SILICON | RECTIFIER DIODE | SINGLE | NO | 50 V | 1 | METALLURGICALLY BONDED | 1 | Not Qualified | O-XALF-W2 | e0 | DO-35 | 175 °C | -65 °C | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | compliant | Microchip | ||||||||||||||||||
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1N4150
Microchip Technology Inc
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$1.0250 | No | Active | 300 mA | 1 V | 4 ns | 100 nA | 500 mW | SILICON | RECTIFIER DIODE | SINGLE | NO | 50 V | 1 | METALLURGICALLY BONDED | 4 A | 1 | Not Qualified | O-LALF-W2 | e0 | MIL-19500/231 | DO-35 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS PACKAGE-2 | compliant | Microchip | ||||||||||||
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1N4150-1
Microsemi Corporation
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$1.1003 | No | Transferred | 200 mA | 4 ns | SILICON | RECTIFIER DIODE | SINGLE | NO | 50 V | 1 | METALLURGICALLY BONDED | 1 | Not Qualified | O-XALF-W2 | e0 | DO-35 | 175 °C | -65 °C | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROSEMI CORP | not_compliant | Microsemi Corporation | ||||||||||||||||||
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1N4150UR-1
Microchip Technology Inc
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$1.1446 | No | Active | 200 mA | 4 ns | 500 mW | SILICON | RECTIFIER DIODE | SINGLE | YES | 50 V | 1 | METALLURGICALLY BONDED | 1 | Not Qualified | O-LELF-R2 | e0 | DO-213AA | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS PACKAGE-2 | compliant | |||||||||||||||||||
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JANTX1N4150-1
Microchip Technology Inc
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$1.1450 | No | Active | 200 mA | 4 ns | SILICON | RECTIFIER DIODE | SINGLE | NO | 50 V | 1 | 1 | Qualified | O-XALF-W2 | e0 | MIL-19500/231H | DO-35 | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | SIMILAR TO DO-7, 2 PIN | compliant | EAR99 | 8541.21.00.95 |