Parametric results for: JANTXV1N5285 under Current Regulator Diodes
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JANTXV1N5285-1
Microchip Technology Inc
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$37.5039 | No | Active | 1 V | 270 µA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | NO | 100 V | 1 | FIELD EFFECT | 14 MΩ | Qualified | O-LALF-W2 | e0 | MIL-PRF-19500 | DO-7 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | DO-35, 2 PIN | compliant | ||||||||||
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JANTXV1N5285UR-1
Microchip Technology Inc
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$41.4618 | No | Active | 1 V | 270 µA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | YES | 100 V | 1 | FIELD EFFECT | METALLURGICALLY BONDED | Qualified | O-LELF-R2 | e0 | MIL-19500 | DO-213AB | 1 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS, LL41, MELF-2 | compliant | |||||||||
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JANTXV1N5285
Compensated Devices Inc
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Check for Price | Obsolete | 1 V | 270 µA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | NO | 100 V | 1 | FIELD EFFECT | 1.95 MΩ | Not Qualified | O-XALF-W2 | MIL-19500/463G | DO-7 | 175 °C | -65 °C | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | WIRE | AXIAL | COMPENSATED DEVICES INC | HERMETIC SEALED PACKAGE-2 | unknown | |||||||||||||
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JANTXV1N5285
Cobham PLC
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Check for Price | No | Obsolete | 1 V | 270 µA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | NO | 100 V | 1 | FIELD EFFECT | 14 MΩ | 1.95 MΩ | Not Qualified | O-LALF-W2 | e0 | MIL-19500/463 | DO-7 | 200 °C | -55 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | KNOX SEMICONDUCTORS INC | O-LALF-W2 | unknown | DO-7 | 2 | EAR99 | 8541.10.00.70 | |||||
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JANTXV1N5285UR-1
Microsemi Corporation
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Check for Price | No | No | Transferred | 1 V | 270 µA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | YES | 1 | FIELD EFFECT | METALLURGICALLY BONDED | Not Qualified | O-LELF-R2 | e0 | MIL-19500 | DO-213AB | 1 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROSEMI CORP | HERMETIC SEALED, GLASS, LL41, MELF-2 | unknown | DO-213AB | 2 | EAR99 | 8541.10.00.70 | |||||
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JANTXV1N5285UR
Microsemi Corporation
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Check for Price | No | Obsolete | 1 V | 270 µA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | YES | 100 V | 1 | FIELD EFFECT | 14 MΩ | Not Qualified | O-XELF-R2 | e0 | DO-213AB | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | Tin/Lead (Sn/Pb) | WRAP AROUND | END | MICROSEMI CORP | O-XELF-R2 | compliant | DO-213AB | 2 | EAR99 | 8541.10.00.70 | |||||||||
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JANTXV1N5285
Motorola Semiconductor Products
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Check for Price | Obsolete | 1 V | 270 µA | 600 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | NO | 100 V | 1 | FIELD EFFECT | 1.95 MΩ | Not Qualified | O-LALF-W2 | DO-204AA | 200 °C | -55 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WIRE | AXIAL | MOTOROLA INC | O-LALF-W2 | unknown | EAR99 | 8541.10.00.70 | ||||||||||||
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JANTXV1N5285-1
Knox Semiconductor Inc
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Check for Price | No | Transferred | 1 V | 270 µA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | NO | 100 V | 1 | FIELD EFFECT | 14 MΩ | Not Qualified | O-LALF-W2 | e0 | MIL-19500/463 | DO-7 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | KNOX SEMICONDUCTORS INC | GLASS PACKAGE-2 | unknown | ||||||||||||
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JANTXV1N5285UR-1
Compensated Devices Inc
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Check for Price | Transferred | 1 V | 270 µA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | YES | 100 V | 1 | FIELD EFFECT | METALLURGICALLY BONDED | 1.95 MΩ | Not Qualified | O-XELF-R2 | MIL-19500/463G | DO-213AB | 175 °C | -65 °C | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | WRAP AROUND | END | COMPENSATED DEVICES INC | HERMETIC SEALED PACKAGE-2 | unknown | ||||||||||||
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JANTXV1N5285
Motorola Mobility LLC
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Check for Price | Obsolete | 1 V | 270 µA | 600 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | NO | 100 V | 1 | FIELD EFFECT | 1.95 MΩ | Not Qualified | O-LALF-W2 | DO-204AA | 200 °C | -55 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WIRE | AXIAL | MOTOROLA INC | O-LALF-W2 | unknown | EAR99 | 8541.10.00.70 |