Parametric results for: JANTXV1N5301 under Current Regulator Diodes
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JANTXV1N5301-1
Microchip Technology Inc
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$37.5039 | No | Active | 1.55 V | 1.4 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | NO | 100 V | 1 | FIELD EFFECT | 540 kΩ | Qualified | O-LALF-W2 | e0 | MIL-PRF-19500 | DO-7 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | DO-35, 2 PIN | compliant | |||||||||||||
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JANTXV1N5301-1
Microsemi Corporation
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$38.5110 | No | No | Transferred | 1.55 V | 1.4 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | NO | 1 | FIELD EFFECT | METALLURGICALLY BONDED | Not Qualified | O-XALF-W2 | e0 | MIL-19500/463 | DO-35 | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROSEMI CORP | DO-35, 2 PIN | unknown | DO-7 | 2 | EAR99 | 8541.10.00.70 | Microsemi Corporation | ||||||||||
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JANTXV1N5301UR-1
Microchip Technology Inc
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$41.4618 | No | Active | 1.55 V | 1.4 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | YES | 100 V | 1 | FIELD EFFECT | METALLURGICALLY BONDED | Qualified | O-LELF-R2 | e0 | MIL-19500 | DO-213AB | 1 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS, LL41, MELF-2 | compliant | ||||||||||||
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JANTXV1N5301UR-1
Microsemi Corporation
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$42.5700 | No | No | Transferred | 1.55 V | 1.4 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | YES | 1 | FIELD EFFECT | METALLURGICALLY BONDED | Not Qualified | O-LELF-R2 | e0 | MIL-19500 | DO-213AB | 1 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROSEMI CORP | HERMETIC SEALED, GLASS, LL41, MELF-2 | unknown | DO-213AB | 2 | EAR99 | 8541.10.00.70 | ||||||||
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JANTXV1N5301UR
Compensated Devices Inc
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Check for Price | Obsolete | 1.55 V | 1.4 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | YES | 100 V | 1 | FIELD EFFECT | Not Qualified | O-XELF-R2 | MIL-19500/463G | DO-213AB | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | WRAP AROUND | END | COMPENSATED DEVICES INC | HERMETIC SEALED PACKAGE-2 | unknown | |||||||||||||||||||
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JANTXV1N5301
Microsemi Corporation
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Check for Price | No | Obsolete | 1.55 V | 1.4 mA | 600 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | NO | 100 V | 1 | FIELD EFFECT | 540 kΩ | Not Qualified | O-LALF-W2 | e0 | DO-204AA | ISOLATED | 2 | GLASS | ROUND | LONG FORM | Tin/Lead (Sn/Pb) | WIRE | AXIAL | MICROSEMI CORP | O-LALF-W2 | not_compliant | DO-7 | 2 | EAR99 | 8541.10.00.70 | ||||||||||||
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JANTXV1N5301UR-1
MACOM
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Check for Price | Yes | Transferred | 1.55 V | 1.4 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | YES | 1 | FIELD EFFECT | METALLURGICALLY BONDED | Qualified | O-XELF-R2 | DO-213AB | NOT SPECIFIED | NOT SPECIFIED | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | WRAP AROUND | END | M/A-COM TECHNOLOGY SOLUTIONS INC | compliant | EAR99 | 8541.10.00.70 | ||||||||||||||||
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JANTXV1N5301
Motorola Semiconductor Products
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Check for Price | Obsolete | 1.55 V | 1.4 mA | 600 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | NO | 100 V | 1 | FIELD EFFECT | 115 kΩ | Not Qualified | O-LALF-W2 | DO-204AA | 200 °C | -55 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WIRE | AXIAL | MOTOROLA INC | O-LALF-W2 | unknown | EAR99 | 8541.10.00.70 | |||||||||||||||
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JANTXV1N5301-1
Micrometrics Inc
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Check for Price | Obsolete | 1.55 V | 1.4 mA | 600 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | NO | 100 V | 1 | 540 kΩ | ISOLATED | MICROMETRICS INC | unknown | EAR99 | |||||||||||||||||||||||||||||
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JANTXV1N5301-1
Defense Logistics Agency
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Check for Price | Active | 1.55 V | 1.4 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | NO | 100 V | 1 | FIELD EFFECT | Qualified | O-XALF-W2 | MIL-19500/463G | DO-7 | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | WIRE | AXIAL | DEFENSE LOGISTICS AGENCY | HERMETIC SEALED PACKAGE-2 | unknown |