Parametric results for: JANTXV2N6790 under Power Field-Effect Transistors

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Manufacturer Part Number: jantxv2n6790
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JANTXV2N6790
Harris Semiconductor
Check for Price Obsolete N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 200 V 1 3.5 A 800 mΩ RADIATION HARDENED 80 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 20 W 14 A SWITCHING SILICON 100 ns 90 ns TO-205AF O-MBCY-W3 Not Qualified MILITARY STANDARD (USA) 150 °C DRAIN METAL ROUND CYLINDRICAL NOT SPECIFIED WIRE BOTTOM HARRIS SEMICONDUCTOR unknown EAR99 8541.29.00.95
JANTXV2N6790
Infineon Technologies AG
Check for Price No Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 200 V 1 3.5 A 850 mΩ AVALANCHE RATED 0.242 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 20 W 14 A SWITCHING SILICON TO-205AF O-MBCY-W3 e0 Qualified MIL-19500/555 150 °C NOT SPECIFIED NOT SPECIFIED METAL ROUND CYLINDRICAL Tin/Lead (Sn/Pb) WIRE BOTTOM INFINEON TECHNOLOGIES AG unknown EAR99 TO-39, 3 PIN Infineon
JANTXV2N6790
International Rectifier
Check for Price No No Transferred N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 200 V 1 3.5 A 920 mΩ AVALANCHE RATED 66 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 14 A SWITCHING SILICON TO-205AF O-MBCY-W3 Qualified MIL-19500/555 NOT SPECIFIED NOT SPECIFIED METAL ROUND CYLINDRICAL WIRE BOTTOM INTERNATIONAL RECTIFIER CORP compliant EAR99 HERMETIC SEALED, TO-39, 3 PIN BCY 2
JANTXV2N6790
Microsemi Corporation
Check for Price No Obsolete N-CHANNEL NO SINGLE 3 200 V 1 3.5 A 800 mΩ RADIATION HARDENED METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 20 W 14 A SWITCHING SILICON TO-39 O-MBCY-W3 e0 Qualified MILITARY STANDARD (USA) 150 °C DRAIN METAL ROUND CYLINDRICAL TIN LEAD WIRE BOTTOM MICROSEMI CORP unknown EAR99 Microsemi Corporation
JANTXV2N6790
Intersil Corporation
Check for Price No Obsolete N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 200 V 1 3.5 A 800 mΩ RADIATION HARDENED METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 20 W 14 A SWITCHING SILICON TO-205AF O-MBCY-W3 e0 Not Qualified MILITARY STANDARD (USA) 150 °C DRAIN METAL ROUND CYLINDRICAL TIN LEAD WIRE BOTTOM INTERSIL CORP not_compliant EAR99
JANTXV2N6790
Defense Logistics Agency
Check for Price Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 200 V 1 3.5 A 800 mΩ RADIATION HARDENED METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 14 A SWITCHING SILICON TO-205AF O-MBCY-W3 Qualified MILITARY STANDARD (USA) -55 °C DRAIN METAL ROUND CYLINDRICAL WIRE BOTTOM DEFENSE LOGISTICS AGENCY unknown EAR99
JANTXV2N6790U
Defense Logistics Agency
Check for Price Active N-CHANNEL YES 18 200 V 3.5 A 800 mΩ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SWITCHING SILICON S-CQCC-N18 Qualified MILITARY STANDARD (USA) -55 °C NOT SPECIFIED NOT SPECIFIED CERAMIC, METAL-SEALED COFIRED SQUARE CHIP CARRIER NO LEAD QUAD DEFENSE LOGISTICS AGENCY unknown EAR99
JANTXV2N6790U
Microsemi Corporation
Check for Price No Obsolete N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 15 200 V 1 2.8 A 850 mΩ HIGH RELIABILTY METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 20 W 11 A SWITCHING SILICON R-CQCC-N15 Qualified MIL-19500 150 °C NOT SPECIFIED NOT SPECIFIED SOURCE CERAMIC, METAL-SEALED COFIRED RECTANGULAR CHIP CARRIER NO LEAD QUAD MICROSEMI CORP unknown EAR99 CERAMIC, LCC-18/15 LCC 18/15
JANTXV2N6790U
Infineon Technologies AG
Check for Price No Active N-CHANNEL YES SINGLE 1 3.5 A METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 20 W e0 150 °C NOT SPECIFIED NOT SPECIFIED Tin/Lead (Sn/Pb) INFINEON TECHNOLOGIES AG unknown EAR99 Infineon
JANTXV2N6790U
International Rectifier
Check for Price No No Obsolete N-CHANNEL YES SINGLE 18 200 V 1 3.5 A 800 mΩ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 20 W SWITCHING SILICON S-CQCC-N18 e0 Not Qualified MILITARY STANDARD (USA) 150 °C CERAMIC, METAL-SEALED COFIRED SQUARE CHIP CARRIER TIN LEAD NO LEAD QUAD INTERNATIONAL RECTIFIER CORP compliant EAR99