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K1B3216BDD-BI700
Samsung Semiconductor
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Check for Price | Yes | Obsolete | 33.5544 Mbit | 16 | 2MX16 | 1.8 V | 70 ns | COMMON | 2000000 | 2.0972 M | 3-STATE | 100 µA | 35 µA | CMOS | INDUSTRIAL | R-PBGA-B54 | Not Qualified | 85 °C | -40 °C | 54 | PLASTIC/EPOXY | FBGA | BGA54,6X9,30 | RECTANGULAR | GRID ARRAY, FINE PITCH | YES | BALL | 750 µm | BOTTOM | SAMSUNG SEMICONDUCTOR INC | FBGA, BGA54,6X9,30 | unknown | EAR99 | 8542.32.00.71 | ||
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K1B3216BDD-BI70T
Samsung Semiconductor
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Check for Price | Yes | Obsolete | 33.5544 Mbit | 16 | 2MX16 | 1.8 V | 70 ns | COMMON | 2000000 | 2.0972 M | 3-STATE | 100 µA | 35 µA | CMOS | INDUSTRIAL | R-PBGA-B54 | Not Qualified | 85 °C | -40 °C | 54 | PLASTIC/EPOXY | FBGA | BGA54,6X9,30 | RECTANGULAR | GRID ARRAY, FINE PITCH | YES | BALL | 750 µm | BOTTOM | SAMSUNG SEMICONDUCTOR INC | FBGA, BGA54,6X9,30 | unknown | EAR99 | 8542.32.00.71 | ||
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K1B3216BDD-FI70T
Samsung Semiconductor
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Check for Price | No | Obsolete | 33.5544 Mbit | 16 | 2MX16 | 1.8 V | 70 ns | COMMON | 2000000 | 2.0972 M | 3-STATE | 100 µA | 35 µA | CMOS | INDUSTRIAL | R-PBGA-B54 | Not Qualified | 85 °C | -40 °C | 54 | PLASTIC/EPOXY | FBGA | BGA54,6X9,30 | RECTANGULAR | GRID ARRAY, FINE PITCH | YES | BALL | 750 µm | BOTTOM | SAMSUNG SEMICONDUCTOR INC | FBGA, BGA54,6X9,30 | unknown | EAR99 | 8542.32.00.71 | ||
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K1B3216BDD-FI70
Samsung Semiconductor
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Check for Price | No | Obsolete | 33.5544 Mbit | 16 | 2MX16 | 1.8 V | 70 ns | COMMON | 2000000 | 2.0972 M | 3-STATE | 100 µA | 35 µA | CMOS | INDUSTRIAL | R-PBGA-B54 | Not Qualified | 85 °C | -40 °C | 54 | PLASTIC/EPOXY | FBGA | BGA54,6X9,30 | RECTANGULAR | GRID ARRAY, FINE PITCH | YES | BALL | 750 µm | BOTTOM | SAMSUNG SEMICONDUCTOR INC | FBGA, BGA54,6X9,30 | unknown | EAR99 | 8542.32.00.71 | ||
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K1B3216BDD-BI70
Samsung Semiconductor
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Check for Price | Yes | Obsolete | 33.5544 Mbit | 16 | 2MX16 | 1.8 V | 70 ns | COMMON | 2000000 | 2.0972 M | 3-STATE | 100 µA | 35 µA | CMOS | INDUSTRIAL | R-PBGA-B54 | Not Qualified | 85 °C | -40 °C | 54 | PLASTIC/EPOXY | FBGA | BGA54,6X9,30 | RECTANGULAR | GRID ARRAY, FINE PITCH | YES | BALL | 750 µm | BOTTOM | SAMSUNG SEMICONDUCTOR INC | FBGA, BGA54,6X9,30 | unknown | EAR99 | 8542.32.00.71 | ||
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K1B3216BDD-FI700
Samsung Semiconductor
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Check for Price | No | Obsolete | 33.5544 Mbit | 16 | 2MX16 | 1.8 V | 70 ns | COMMON | 2000000 | 2.0972 M | 3-STATE | 100 µA | 35 µA | CMOS | INDUSTRIAL | R-PBGA-B54 | Not Qualified | 85 °C | -40 °C | 54 | PLASTIC/EPOXY | FBGA | BGA54,6X9,30 | RECTANGULAR | GRID ARRAY, FINE PITCH | YES | BALL | 750 µm | BOTTOM | SAMSUNG SEMICONDUCTOR INC | FBGA, BGA54,6X9,30 | unknown | EAR99 | 8542.32.00.71 |