Parametric results for: K4A8G165WB-BCRC under DRAMs

All Filters Access Mode Clock Frequency-Max (fCLK) I/O Type Interleaved Burst Length JESD-30 Code Length Manufacturer Memory Density Memory IC Type Memory Width Number of Functions Number of Ports Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Refresh Cycles Supply Voltage-Nom (Vsup) Access Mode (1)

MULTI BANK PAGE BURST 2

2 hits Apply

Clock Frequency-Max (fCLK) (1)

1.2 GHz 2

2 hits Apply

COMMON 2

2 hits Apply

8 2

2 hits Apply

R-PBGA-B96 2

2 hits Apply

13.3 mm 2

2 hits Apply

Manufacturer (1)

Samsung Semiconductor 2

2 hits Apply

Memory Density (1)

8.5899 Gbit 2

2 hits Apply

DDR4 DRAM 2

2 hits Apply

Memory Width (1)

16 2

2 hits Apply

1.0 2

2 hits Apply

1 2

2 hits Apply

96 2

2 hits Apply

536.8709 M 2

2 hits Apply

5.12E8 2

2 hits Apply

SYNCHRONOUS 2

2 hits Apply

85.0 °C 2

2 hits Apply

0.0 °C 2

2 hits Apply

Organization (1)

512MX16 2

2 hits Apply

3-STATE 2

2 hits Apply

PLASTIC/EPOXY 2

2 hits Apply

TFBGA 2

2 hits Apply

BGA96,9X16,32 2

2 hits Apply

RECTANGULAR 2

2 hits Apply

GRID ARRAY, THIN PROFILE, FINE PITCH 2

2 hits Apply

Refresh Cycles (1)

8192 2

2 hits Apply

Supply Voltage-Nom (Vsup) (1)

1.2 V 2

2 hits Apply