Parametric results for: K4D263238K under DRAMs

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Manufacturer Part Number: k4d263238k
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K4D263238K-FC400
Samsung Semiconductor
Check for Price Yes Obsolete 134.2177 Mbit 32 4MX32 2.5 V 600 ps 250 MHz 4096 FOUR BANK PAGE BURST GDDR1 DRAM AUTO/SELF REFRESH COMMON 2,4,8 1 1 4000000 4.1943 M SYNCHRONOUS 3-STATE YES 2,4,8,FP 20 mA 402 µA 2.625 V 2.375 V CMOS COMMERCIAL S-PBGA-B144 Not Qualified e1 3 65 °C 260 144 PLASTIC/EPOXY LFBGA BGA144,12X12,32 SQUARE GRID ARRAY, LOW PROFILE, FINE PITCH YES TIN SILVER COPPER BALL 800 µm BOTTOM 1.4 mm 12 mm 12 mm SAMSUNG SEMICONDUCTOR INC BGA LFBGA, BGA144,12X12,32 144 unknown EAR99 8542.32.00.02
K4D263238K-FC500
Samsung Semiconductor
Check for Price Yes Obsolete 134.2177 Mbit 32 4MX32 2.5 V 700 ps 200 MHz 4096 FOUR BANK PAGE BURST GDDR1 DRAM AUTO/SELF REFRESH COMMON 2,4,8 1 1 4000000 4.1943 M SYNCHRONOUS 3-STATE YES 2,4,8,FP 20 mA 344 µA 2.625 V 2.375 V CMOS COMMERCIAL S-PBGA-B144 Not Qualified e1 3 65 °C 260 144 PLASTIC/EPOXY LFBGA BGA144,12X12,32 SQUARE GRID ARRAY, LOW PROFILE, FINE PITCH YES TIN SILVER COPPER BALL 800 µm BOTTOM 1.4 mm 12 mm 12 mm SAMSUNG SEMICONDUCTOR INC BGA LFBGA, BGA144,12X12,32 144 unknown EAR99 8542.32.00.02
K4D263238K-UC500
Samsung Semiconductor
Check for Price Yes Obsolete 134.2177 Mbit 32 4MX32 2.5 V 700 ps 250 MHz 4096 FOUR BANK PAGE BURST GDDR1 DRAM AUTO/SELF REFRESH COMMON 2,4,8 1 1 4000000 4.1943 M SYNCHRONOUS 3-STATE YES 2,4,8,FP 20 mA 358 µA 2.625 V 2.375 V CMOS COMMERCIAL R-PQFP-G100 Not Qualified 2 65 °C 100 PLASTIC/EPOXY TQFP TQFP100,.7X.9,25 RECTANGULAR FLATPACK, THIN PROFILE YES GULL WING 650 µm QUAD 1.2 mm 20 mm 14 mm SAMSUNG SEMICONDUCTOR INC QFP TQFP, TQFP100,.7X.9,25 100 compliant EAR99 8542.32.00.02
K4D263238K-GC500
Samsung Semiconductor
Check for Price No Obsolete 134.2177 Mbit 32 4MX32 2.5 V 700 ps FOUR BANK PAGE BURST GDDR1 DRAM AUTO/SELF REFRESH 1 1 4000000 4.1943 M SYNCHRONOUS YES 2.625 V 2.375 V CMOS COMMERCIAL S-PBGA-B144 Not Qualified e0 65 °C 144 PLASTIC/EPOXY LFBGA SQUARE GRID ARRAY, LOW PROFILE, FINE PITCH YES TIN LEAD BALL 800 µm BOTTOM 1.4 mm 12 mm 12 mm SAMSUNG SEMICONDUCTOR INC BGA LFBGA, 144 compliant EAR99 8542.32.00.02
K4D263238K-VC400
Samsung Semiconductor
Check for Price Yes Obsolete 134.2177 Mbit 32 4MX32 2.5 V 600 ps 250 MHz 4096 FOUR BANK PAGE BURST GDDR1 DRAM AUTO/SELF REFRESH COMMON 2,4,8 1 1 4000000 4.1943 M SYNCHRONOUS 3-STATE YES 2,4,8,FP 20 mA 402 µA 2.625 V 2.375 V CMOS COMMERCIAL S-PBGA-B144 Not Qualified e1 3 65 °C 260 144 PLASTIC/EPOXY LFBGA BGA144,12X12,32 SQUARE GRID ARRAY, LOW PROFILE, FINE PITCH YES TIN SILVER COPPER BALL 800 µm BOTTOM 1.4 mm 12 mm 12 mm SAMSUNG SEMICONDUCTOR INC BGA LFBGA, BGA144,12X12,32 144 compliant EAR99 8542.32.00.02
K4D263238K-VC40T
Samsung Semiconductor
Check for Price Yes Obsolete 134.2177 Mbit 32 4MX32 2.5 V 600 ps 250 MHz 4096 FOUR BANK PAGE BURST GDDR1 DRAM AUTO/SELF REFRESH COMMON 2,4,8 1 1 4000000 4.1943 M SYNCHRONOUS 3-STATE YES 2,4,8,FP 20 mA 402 µA 2.625 V 2.375 V CMOS COMMERCIAL S-PBGA-B144 Not Qualified 3 65 °C 260 144 PLASTIC/EPOXY LFBGA BGA144,12X12,32 SQUARE GRID ARRAY, LOW PROFILE, FINE PITCH YES BALL 800 µm BOTTOM 1.4 mm 12 mm 12 mm SAMSUNG SEMICONDUCTOR INC BGA LFBGA, BGA144,12X12,32 144 unknown EAR99 8542.32.00.02
K4D263238K-VC500
Samsung Semiconductor
Check for Price Yes Obsolete 134.2177 Mbit 32 4MX32 2.5 V 700 ps 200 MHz 4096 FOUR BANK PAGE BURST GDDR1 DRAM AUTO/SELF REFRESH COMMON 2,4,8 1 1 4000000 4.1943 M SYNCHRONOUS 3-STATE YES 2,4,8,FP 20 mA 344 µA 2.625 V 2.375 V CMOS COMMERCIAL S-PBGA-B144 Not Qualified e1 3 65 °C 260 144 PLASTIC/EPOXY LFBGA BGA144,12X12,32 SQUARE GRID ARRAY, LOW PROFILE, FINE PITCH YES TIN SILVER COPPER BALL 800 µm BOTTOM 1.4 mm 12 mm 12 mm SAMSUNG SEMICONDUCTOR INC BGA LFBGA, BGA144,12X12,32 144 compliant EAR99 8542.32.00.02
K4D263238K-FC40T
Samsung Semiconductor
Check for Price Yes Yes Obsolete 134.2177 Mbit 32 4MX32 2.5 V 600 ps 250 MHz 4096 GDDR1 DRAM COMMON 2,4,8 4000000 4.1943 M 3-STATE 2,4,8,FP 20 mA 402 µA CMOS COMMERCIAL S-PBGA-B144 Not Qualified e1 3 65 °C 260 144 PLASTIC/EPOXY FBGA BGA144,12X12,32 SQUARE GRID ARRAY, FINE PITCH YES TIN SILVER COPPER BALL 800 µm BOTTOM SAMSUNG SEMICONDUCTOR INC unknown EAR99 8542.32.00.02
K4D263238K-GC50T
Samsung Semiconductor
Check for Price Obsolete 134.2177 Mbit 32 4MX32 2.5 V 700 ps FOUR BANK PAGE BURST DDR DRAM AUTO/SELF REFRESH 1 1 4000000 4.1943 M SYNCHRONOUS YES 2.625 V 2.375 V CMOS COMMERCIAL S-PBGA-B144 Not Qualified 65 °C 144 PLASTIC/EPOXY LFBGA SQUARE GRID ARRAY, LOW PROFILE, FINE PITCH YES BALL 800 µm BOTTOM 1.4 mm 12 mm 12 mm SAMSUNG SEMICONDUCTOR INC BGA LFBGA, 144 unknown EAR99 8542.32.00.02
K4D263238K-UC40
Samsung Semiconductor
Check for Price Yes Yes Obsolete 134.2177 Mbit 32 4MX32 2.5 V 600 ps 250 MHz 4096 FOUR BANK PAGE BURST GDDR1 DRAM AUTO/SELF REFRESH COMMON 2,4,8 1 1 4000000 4.1943 M SYNCHRONOUS 3-STATE YES 2,4,8,FP 20 mA 412 µA 2.625 V 2.375 V CMOS COMMERCIAL R-PQFP-G100 Not Qualified 3 65 °C 260 100 PLASTIC/EPOXY TQFP TQFP100,.7X.9,25 RECTANGULAR FLATPACK, THIN PROFILE YES GULL WING 650 µm QUAD 1.2 mm 20 mm 14 mm SAMSUNG SEMICONDUCTOR INC TQFP, TQFP100,.7X.9,25 unknown EAR99 8542.32.00.02