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K4D263238K-VC400
Samsung Semiconductor
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Check for Price | Yes | Obsolete | 134.2177 Mbit | 32 | 4MX32 | 2.5 V | 600 ps | 250 MHz | 4096 | FOUR BANK PAGE BURST | GDDR1 DRAM | AUTO/SELF REFRESH | COMMON | 2,4,8 | 1 | 1 | 4000000 | 4.1943 M | SYNCHRONOUS | 3-STATE | YES | 2,4,8,FP | 20 mA | 402 µA | 2.625 V | 2.375 V | CMOS | COMMERCIAL | S-PBGA-B144 | Not Qualified | e1 | 3 | 65 °C | 260 | 144 | PLASTIC/EPOXY | LFBGA | BGA144,12X12,32 | SQUARE | GRID ARRAY, LOW PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1.4 mm | 12 mm | 12 mm | SAMSUNG SEMICONDUCTOR INC | BGA | LFBGA, BGA144,12X12,32 | 144 | compliant | EAR99 | 8542.32.00.02 | |||
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K4D263238K-VC40T
Samsung Semiconductor
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Check for Price | Yes | Obsolete | 134.2177 Mbit | 32 | 4MX32 | 2.5 V | 600 ps | 250 MHz | 4096 | FOUR BANK PAGE BURST | GDDR1 DRAM | AUTO/SELF REFRESH | COMMON | 2,4,8 | 1 | 1 | 4000000 | 4.1943 M | SYNCHRONOUS | 3-STATE | YES | 2,4,8,FP | 20 mA | 402 µA | 2.625 V | 2.375 V | CMOS | COMMERCIAL | S-PBGA-B144 | Not Qualified | 3 | 65 °C | 260 | 144 | PLASTIC/EPOXY | LFBGA | BGA144,12X12,32 | SQUARE | GRID ARRAY, LOW PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.4 mm | 12 mm | 12 mm | SAMSUNG SEMICONDUCTOR INC | BGA | LFBGA, BGA144,12X12,32 | 144 | unknown | EAR99 | 8542.32.00.02 | |||||
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K4D263238K-VC40
Samsung Semiconductor
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Check for Price | Yes | Yes | Obsolete | 134.2177 Mbit | 32 | 4MX32 | 2.5 V | 600 ps | 250 MHz | 4096 | GDDR1 DRAM | COMMON | 2,4,8 | 4000000 | 4.1943 M | 3-STATE | 2,4,8,FP | 20 mA | 402 µA | CMOS | COMMERCIAL | S-PBGA-B144 | Not Qualified | e1 | 3 | 65 °C | 260 | 144 | PLASTIC/EPOXY | FBGA | BGA144,12X12,32 | SQUARE | GRID ARRAY, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | SAMSUNG SEMICONDUCTOR INC | unknown | EAR99 | 8542.32.00.02 |