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Parametric results for: K4E640812E-JI/P under DRAMs

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Manufacturer Part Number: k4e640812eji
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K4E640812E-JI50T
 Samsung Semiconductor 		Check for Price No Active 67.1089 Mbit 8 8MX8 3.3 V 50 ns 4096 EDO DRAM COMMON 8000000 8.3886 M 3-STATE NO 1 mA 110 µA CMOS INDUSTRIAL R-PDSO-J32 Not Qualified 85 °C -40 °C 32 PLASTIC/EPOXY SOJ SOJ32,.44 RECTANGULAR SMALL OUTLINE YES J BEND 1.27 mm DUAL SAMSUNG SEMICONDUCTOR INC SOJ, SOJ32,.44 compliant EAR99 8542.32.00.02
K4E640812E-JI60T
 Samsung Semiconductor 		Check for Price No Active 67.1089 Mbit 8 8MX8 3.3 V 60 ns 4096 EDO DRAM COMMON 8000000 8.3886 M 3-STATE NO 1 mA 100 µA CMOS INDUSTRIAL R-PDSO-J32 Not Qualified 85 °C -40 °C 32 PLASTIC/EPOXY SOJ SOJ32,.44 RECTANGULAR SMALL OUTLINE YES J BEND 1.27 mm DUAL SAMSUNG SEMICONDUCTOR INC SOJ, SOJ32,.44 compliant EAR99 8542.32.00.02
K4E640812E-JI50
 Samsung Semiconductor 		Check for Price Obsolete 67.1089 Mbit 8 8MX8 3.3 V 50 ns FAST PAGE WITH EDO EDO DRAM RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH 1 1 8000000 8.3886 M ASYNCHRONOUS 3.6 V 3 V CMOS INDUSTRIAL R-PDSO-J32 Not Qualified 85 °C -40 °C 32 PLASTIC/EPOXY SOJ RECTANGULAR SMALL OUTLINE YES J BEND 1.27 mm DUAL 3.76 mm 20.96 mm 10.16 mm SAMSUNG SEMICONDUCTOR INC SOJ, unknown EAR99 8542.32.00.02 SOJ 32
K4E640812E-JI500
 Samsung Semiconductor 		Check for Price No Active 67.1089 Mbit 8 8MX8 3.3 V 50 ns 4096 EDO DRAM COMMON 8000000 8.3886 M 3-STATE NO 1 mA 110 µA CMOS INDUSTRIAL R-PDSO-J32 Not Qualified 85 °C -40 °C 32 PLASTIC/EPOXY SOJ SOJ32,.44 RECTANGULAR SMALL OUTLINE YES J BEND 1.27 mm DUAL SAMSUNG SEMICONDUCTOR INC SOJ, SOJ32,.44 compliant EAR99 8542.32.00.02
K4E640812E-JI45T
 Samsung Semiconductor 		Check for Price No Active 67.1089 Mbit 8 8MX8 3.3 V 45 ns 4096 EDO DRAM COMMON 8000000 8.3886 M 3-STATE NO 1 mA 120 µA CMOS INDUSTRIAL R-PDSO-J32 Not Qualified 85 °C -40 °C 32 PLASTIC/EPOXY SOJ SOJ32,.44 RECTANGULAR SMALL OUTLINE YES J BEND 1.27 mm DUAL SAMSUNG SEMICONDUCTOR INC SOJ, SOJ32,.44 compliant EAR99 8542.32.00.02
K4E640812E-JI600
 Samsung Semiconductor 		Check for Price No Active 67.1089 Mbit 8 8MX8 3.3 V 60 ns 4096 EDO DRAM COMMON 8000000 8.3886 M 3-STATE NO 1 mA 100 µA CMOS INDUSTRIAL R-PDSO-J32 Not Qualified 85 °C -40 °C 32 PLASTIC/EPOXY SOJ SOJ32,.44 RECTANGULAR SMALL OUTLINE YES J BEND 1.27 mm DUAL SAMSUNG SEMICONDUCTOR INC SOJ, SOJ32,.44 compliant EAR99 8542.32.00.02
K4E640812E-JI60
 Samsung Semiconductor 		Check for Price Obsolete 67.1089 Mbit 8 8MX8 3.3 V 60 ns FAST PAGE WITH EDO EDO DRAM RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH 1 1 8000000 8.3886 M ASYNCHRONOUS 3.6 V 3 V CMOS INDUSTRIAL R-PDSO-J32 Not Qualified 85 °C -40 °C 32 PLASTIC/EPOXY SOJ RECTANGULAR SMALL OUTLINE YES J BEND 1.27 mm DUAL 3.76 mm 20.96 mm 10.16 mm SAMSUNG SEMICONDUCTOR INC SOJ, unknown EAR99 8542.32.00.02 SOJ 32
K4E640812E-JI45
 Samsung Semiconductor 		Check for Price Obsolete 67.1089 Mbit 8 8MX8 3.3 V 45 ns FAST PAGE WITH EDO EDO DRAM RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH 1 1 8000000 8.3886 M ASYNCHRONOUS 3.6 V 3 V CMOS INDUSTRIAL R-PDSO-J32 Not Qualified 85 °C -40 °C 32 PLASTIC/EPOXY SOJ RECTANGULAR SMALL OUTLINE YES J BEND 1.27 mm DUAL 3.76 mm 20.96 mm 10.16 mm SAMSUNG SEMICONDUCTOR INC SOJ, unknown EAR99 8542.32.00.02 SOJ 32
K4E640812E-JI450
 Samsung Semiconductor 		Check for Price No Active 67.1089 Mbit 8 8MX8 3.3 V 45 ns 4096 EDO DRAM COMMON 8000000 8.3886 M 3-STATE NO 1 mA 120 µA CMOS INDUSTRIAL R-PDSO-J32 Not Qualified 85 °C -40 °C 32 PLASTIC/EPOXY SOJ SOJ32,.44 RECTANGULAR SMALL OUTLINE YES J BEND 1.27 mm DUAL SAMSUNG SEMICONDUCTOR INC SOJ, SOJ32,.44 compliant EAR99 8542.32.00.02