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K4F660812D-TI60
Samsung Semiconductor
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Check for Price | Obsolete | 67.1089 Mbit | 8 | 8MX8 | 3.3 V | 60 ns | FAST PAGE | FAST PAGE DRAM | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | 1 | 1 | 8000000 | 8.3886 M | ASYNCHRONOUS | 3.6 V | 3 V | CMOS | INDUSTRIAL | R-PDSO-G32 | Not Qualified | 85 °C | -40 °C | 32 | PLASTIC/EPOXY | TSOP2 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | GULL WING | 1.27 mm | DUAL | 1.2 mm | 20.95 mm | 10.16 mm | SAMSUNG SEMICONDUCTOR INC | TSOP2 | TSOP2, | 32 | unknown | EAR99 | 8542.32.00.02 | ||||||||||||||
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K4F660812D-JL45
Samsung Semiconductor
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Check for Price | No | Obsolete | 67.1089 Mbit | 8 | 8MX8 | 3.3 V | 45 ns | 8192 | FAST PAGE | FAST PAGE DRAM | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH | COMMON | 1 | 1 | 8000000 | 8.3886 M | ASYNCHRONOUS | 3-STATE | YES | 1 mA | 120 µA | 3.6 V | 3 V | CMOS | COMMERCIAL | R-PDSO-J32 | Not Qualified | e0 | 70 °C | 32 | PLASTIC/EPOXY | SOJ | SOJ32,.44 | RECTANGULAR | SMALL OUTLINE | YES | TIN LEAD | J BEND | 1.27 mm | DUAL | 3.76 mm | 20.96 mm | 10.16 mm | SAMSUNG SEMICONDUCTOR INC | SOJ | SOJ, SOJ32,.44 | 32 | unknown | EAR99 | 8542.32.00.02 | |||||
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K4F660812D-JC45T
Samsung Semiconductor
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Check for Price | No | Active | 67.1089 Mbit | 8 | 8MX8 | 3.3 V | 45 ns | 8192 | FAST PAGE DRAM | COMMON | 8000000 | 8.3886 M | 3-STATE | NO | 1 mA | 120 µA | CMOS | COMMERCIAL | R-PDSO-J32 | Not Qualified | 70 °C | 32 | PLASTIC/EPOXY | SOJ | SOJ32,.44 | RECTANGULAR | SMALL OUTLINE | YES | J BEND | 1.27 mm | DUAL | SAMSUNG SEMICONDUCTOR INC | SOJ, SOJ32,.44 | compliant | EAR99 | 8542.32.00.02 | |||||||||||||||||||
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K4F660812D-TC60
Samsung Semiconductor
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Check for Price | No | Obsolete | 67.1089 Mbit | 8 | 8MX8 | 3.3 V | 60 ns | 8192 | FAST PAGE | FAST PAGE DRAM | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | COMMON | 1 | 1 | 8000000 | 8.3886 M | ASYNCHRONOUS | 3-STATE | YES | 1 mA | 100 µA | 3.6 V | 3 V | CMOS | COMMERCIAL | R-PDSO-G32 | Not Qualified | e0 | 70 °C | 32 | PLASTIC/EPOXY | TSOP2 | TSOP32,.46 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | TIN LEAD | GULL WING | 1.27 mm | DUAL | 1.2 mm | 20.95 mm | 10.16 mm | SAMSUNG SEMICONDUCTOR INC | TSOP2 | TSOP2, TSOP32,.46 | 32 | unknown | EAR99 | 8542.32.00.02 | |||||
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K4F660812D-JI450
Samsung Semiconductor
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Check for Price | No | Active | 67.1089 Mbit | 8 | 8MX8 | 3.3 V | 45 ns | 8192 | FAST PAGE DRAM | COMMON | 8000000 | 8.3886 M | 3-STATE | NO | 500 µA | 120 µA | CMOS | INDUSTRIAL | R-PDSO-J32 | Not Qualified | 85 °C | -40 °C | 32 | PLASTIC/EPOXY | SOJ | SOJ32,.44 | RECTANGULAR | SMALL OUTLINE | YES | J BEND | 1.27 mm | DUAL | SAMSUNG SEMICONDUCTOR INC | SOJ, SOJ32,.44 | compliant | EAR99 | 8542.32.00.02 | ||||||||||||||||||
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K4F660812D-JI60
Samsung Semiconductor
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Check for Price | Obsolete | 67.1089 Mbit | 8 | 8MX8 | 3.3 V | 60 ns | FAST PAGE | FAST PAGE DRAM | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | 1 | 1 | 8000000 | 8.3886 M | ASYNCHRONOUS | 3.6 V | 3 V | CMOS | INDUSTRIAL | R-PDSO-J32 | Not Qualified | 85 °C | -40 °C | 32 | PLASTIC/EPOXY | SOJ | RECTANGULAR | SMALL OUTLINE | YES | J BEND | 1.27 mm | DUAL | 3.76 mm | 20.96 mm | 10.16 mm | SAMSUNG SEMICONDUCTOR INC | SOJ | SOJ, | 32 | unknown | EAR99 | 8542.32.00.02 | ||||||||||||||
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K4F660812D-TI500
Samsung Semiconductor
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Check for Price | No | Active | 67.1089 Mbit | 8 | 8MX8 | 3.3 V | 50 ns | 8192 | FAST PAGE DRAM | COMMON | 8000000 | 8.3886 M | 3-STATE | NO | 500 µA | 110 µA | CMOS | INDUSTRIAL | R-PDSO-G32 | Not Qualified | 85 °C | -40 °C | 32 | PLASTIC/EPOXY | TSOP | TSOP32,.46 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | GULL WING | 1.27 mm | DUAL | SAMSUNG SEMICONDUCTOR INC | TSOP, TSOP32,.46 | compliant | EAR99 | 8542.32.00.02 | ||||||||||||||||||
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K4F660812D-TL600
Samsung Semiconductor
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Check for Price | No | Obsolete | 67.1089 Mbit | 8 | 8MX8 | 3.3 V | 60 ns | 8192 | FAST PAGE | FAST PAGE DRAM | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH | COMMON | 1 | 1 | 8000000 | 8.3886 M | ASYNCHRONOUS | 3-STATE | YES | 1 mA | 100 µA | 3.6 V | 3 V | CMOS | COMMERCIAL | R-PDSO-G32 | Not Qualified | 70 °C | 240 | 30 | 32 | PLASTIC/EPOXY | TSOP2 | TSOP32,.46 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | GULL WING | 1.27 mm | DUAL | 1.2 mm | 20.95 mm | 10.16 mm | SAMSUNG SEMICONDUCTOR INC | TSOP2 | TSOP2, TSOP32,.46 | 32 | compliant | EAR99 | 8542.32.00.02 | |||||
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K4F660812D-JL60
Samsung Semiconductor
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Check for Price | No | Obsolete | 67.1089 Mbit | 8 | 8MX8 | 3.3 V | 60 ns | 8192 | FAST PAGE | FAST PAGE DRAM | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH | COMMON | 1 | 1 | 8000000 | 8.3886 M | ASYNCHRONOUS | 3-STATE | YES | 1 mA | 100 µA | 3.6 V | 3 V | CMOS | COMMERCIAL | R-PDSO-J32 | Not Qualified | e0 | 70 °C | 32 | PLASTIC/EPOXY | SOJ | SOJ32,.44 | RECTANGULAR | SMALL OUTLINE | YES | TIN LEAD | J BEND | 1.27 mm | DUAL | 3.76 mm | 20.96 mm | 10.16 mm | SAMSUNG SEMICONDUCTOR INC | SOJ | SOJ, SOJ32,.44 | 32 | unknown | EAR99 | 8542.32.00.02 | |||||
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K4F660812D-JP60T
Samsung Semiconductor
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Check for Price | No | Active | 67.1089 Mbit | 8 | 8MX8 | 3.3 V | 60 ns | 8192 | FAST PAGE DRAM | COMMON | 8000000 | 8.3886 M | 3-STATE | YES | 200 µA | 100 µA | CMOS | INDUSTRIAL | R-PDSO-J32 | Not Qualified | 85 °C | -40 °C | 32 | PLASTIC/EPOXY | SOJ | SOJ32,.44 | RECTANGULAR | SMALL OUTLINE | YES | J BEND | 1.27 mm | DUAL | SAMSUNG SEMICONDUCTOR INC | SOJ, SOJ32,.44 | compliant | EAR99 | 8542.32.00.02 |